Abstract:$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial development of group IV semiconductors under low thermal budgets and CMOS compatible conditions. The $\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ films were produced between 160-200oC with 3-5% Si and ~ 5-11 % Sn, which traverses the indirect to direct gap transition in Ge-Sn materials. The films were fully strained to Ge and exhibited defect-free microstructures, flat surfaces, homogeneous compositions, uniform thicknesses and sharp interfaces as required for device manufacturing. A comparative study was then conducted to investigate the applicability of $\rm GeH_{3}Cl$ for the synthesis of $\rm Ge_{1-y}Sn_{y}$ binaries under similar experimental conditions. The$\rm Ge_{1-y}Sn_{y}$ films were grown fully strained to Ge, but with reduced Sn compositions ranging from ~ 2 - 7 % and lower thicknesses relative to $\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$. This prompted efforts to further investigate the growth behavior of $\rm Ge_{1-y}Sn_{y}$ using the $\rm GeH_{3}Cl$ method, bypassing the Ge buffer to produce samples directly on Si, with the aim of exploring how to manage interface strain. In this case the $\rm Ge_{1-y}Sn_{y}$ on Si films exhibited compositions and thicknesses comparable to $\rm Ge_{1-y}Sn_{y}$-on-Ge films; however, their strain states were mostly relaxed, presumably due to the large misfit between $\rm Ge_{1-y}Sn_{y}$ and Si. Efforts to increase the concentration and thickness of these samples resulted in non-homogeneous multi-phase materials containing large amounts of interstitial Sn impurities.

Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

Deposition of high-quality Ge film on Si by PECVD using GeCl4/H2 for fabricating near-infrared photodiodes

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices

Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Growth of single crystalline GeSn alloy epilayer on Gd 2 O 3 /Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Sputtered SnTe Thin Films on Si and Ge as a Plasmonic Material

Ion Implantation Damage Recovery in GeSn Thin Films

Growth of silicon based germanium tin alloys

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Single-source, solvent-free, room temperature deposition of black $γ$-CsSnI$_3$ films

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\rm GeH_3Cl$ and $\rm SnH_4$

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate