Abstract:Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mismatch between Si and Ge, it is difficult to directly obtain high quality Ge by epitaxy on Si substrate. Laser recrystallization technology provides a simple, efficient and low-cost way to improve the crystal quality of epitaxial Ge film grown on Si substrate. This technology is essentially a process of thermally induced phase transformation. By controlling the laser process parameters, epitaxial film of a certain thickness is melted, so that lattice rearrangement and recrystallization are achieved, and high-quality thin Ge/Si can be prepared. Laser recrystallization is a high temperature thermal process, and Si–Ge interdiffusion may detrimentally occur. In this paper, the mechanism of Si–Ge interdiffusion is discussed. Based on Fick's law of diffusion, a numerical model for Si–Ge interdiffusion of GOSS is established. On this basis, the process simulation of thermal annealing and laser recrystallization Si–Ge interdiffusion is carried out by Sentaurus Process simulation. The results show that compared with the traditional thermal annealing, the Si–Ge interdiffusion of Ge on Si almost does not occur in the process of laser recrystallization. By reasonably controlling the process parameters of laser recrystallization, the thin Ge film near the Si–Ge interface does not melt, which can not only improve the crystal quality of Ge epitaxial layer, but also effectively avoid the Si–Ge interdiffusion in the process of laser recrystallization. Through this research, we have aimed at predicting and control the Si–Ge interdiffusion, providing an important technical reference for the preparation of high quality GOSS by laser recrystallization technology.

Ion Implantation Damage Recovery in GeSn Thin Films

Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge$_{0.89}$Sn0$_{.11}$

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Impact of post-ion implantation annealing on Se-hyperdoped Ge

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Effect of In-Situ Annealing on the Structural and Optical Properties of GeSn Films Grown by MBE

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Optimization of Laser Recrystallization Process for GeSn Films on Si Substrates Based on Finite Difference Time Domain and Finite Element Method

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Growth of silicon based germanium tin alloys

Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

Mid-infrared Imaging Using Strain-Relaxed Ge 1- x Sn x Alloys Grown on 20 nm Ge Nanowires

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si