Abstract:Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,\mu$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,\mu$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.

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Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Mid-infrared top-gated Ge/Ge$_{0.82}$Sn$_{0.18}$ nanowire phototransistors

Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors

Strain engineering in Ge/GeSn core/shell nanowires

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge$_{0.89}$Sn0$_{.11}$

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

All-Group IV membrane room-temperature mid-infrared photodetector

Growth of silicon based germanium tin alloys

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Strained germanium thin film membrane on silicon substrate for optoelectronics

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Infrared Tubular Microcavity Based on Rolled-Up GeSn/Ge Nanomembranes.