Abstract:Nanoscale Ge0.82Sn0.18 alloys with high crystallinity and content uniformity are achieved using 20 nm Ge nanowires as compliant growth substrates. The obtained Ge/ Ge0.82Sn0.18 core/shell nanowires have a bandgap energy of 0.322 eV and their integration on phototransistors allows the mid‐infrared photodetection with a cutoff wavelength of 3.9 μm. Achieving high crystalline quality germanium‐tin (Ge1 − xSnx) semiconductors at Sn content exceeding 10% is quintessential to implement the long sought‐after silicon‐compatible mid‐infrared photonics. Herein, by using sub‐20 nm Ge nanowires as compliant growth substrates, Ge1 − xSnx alloys with a Sn content of 18% exhibiting a high composition uniformity and crystallinity along a few micrometers in the nanowire axial direction are demonstrated. The measured bandgap energy of the Ge/Ge0.82Sn0.18 core/shell nanowires is 0.322 eV enabling the mid‐infrared photodetection with a cutoff wavelength of 3.9 μm. These narrow bandgap nanowires are also integrated into top‐gated field‐effect transistors and phototransistors. Depending on the gate design, these transistors are found to exhibit either ambipolar or unipolar behavior with a subthreshold swing as low as 228 mV/decade at 85 K. Moreover, varying the top gate voltage from ‐1 to 5 V yields nearly one order of magnitude increase in the photocurrent of the nanowire phototransistor under a 2330 nm illumination. This study shows that the core/shell nanowire architecture with a very thin core not only mitigates the challenges associated with strain build‐up observed in thin films but also provides a promising platform for all‐group IV mid‐infrared photonics and nanoelectronics paving the way toward sensing and imaging applications.

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors

Mid-infrared Imaging Using Strain-Relaxed Ge 1- x Sn x Alloys Grown on 20 nm Ge Nanowires

Mid-infrared top-gated Ge/Ge$_{0.82}$Sn$_{0.18}$ nanowire phototransistors

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Tapering-free monocrystalline Ge nanowires synthesized via plasma-assisted VLS using In and Sn catalysts

Mid-infrared group-IV nanowire laser

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Strain engineering in Ge/GeSn core/shell nanowires

Optoelectronic Properties Of Single-Crystalline Zn2geo4 Nanowires

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Zn2GeO4/SnO2 nanowire architecture: A correlative spatially resolved X-ray study

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge$_{0.89}$Sn0$_{.11}$

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Colloidal synthesis, physical properties, and applications of zero- and one-dimensional GeSn nanostructures

Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy