Abstract:β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2¯01)-oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700-900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500-900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments.

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Ion Implantation Damage Recovery in GeSn Thin Films

Atomic scale mechanism of β to γ phase transformation in gallium oxide

Evolution of secondary defects in arsenic implanted Si

In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

Ion implantation in \b{eta}-Ga2O3: physics and technology

Perspective on atomic scale investigation of point and extended defects in gallium oxide

Thermodynamics of Ion-Cutting of β-Ga 2 O 3 and Wafer-Scale Heterogeneous Integration of a β-Ga 2 O 3 Thin Film onto a Highly Thermal Conductive SiC Substrate

Unraveling optical degradation mechanism of β -Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study

Electrical properties of silicon-implanted β-Ga2O3:Fe crystals

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Oxygen Vacancies and Local Amorphization Introduced by High Fluence Neutron Irradiation in Β -Ga2o3 Power Diodes

Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG

Insights into defect kinetics, mass transport, and electronic structure from spectrum effects in ion-irradiated Bi2O3

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

Sn-loss effect in a Sn-implanted a-SiO2 host-matrix after thermal annealing: A combined XPS, PL, and DFT study