Abstract:The modification of GaN with Au nanoparticles is a promising way for manipulating optical properties in optoelectronics and enhancing the sensitivity of GaN-based substrates used in Surface Enhanced Raman Spectroscopy. Ion implantation is an attractive method for the preparation of high-purity metal nanoparticles on the surface or within the bulk of solids, although this process in crystals is not yet fully understood. Here we study the specific stages of Au nanoparticle formation in c-plane GaN crystals implanted with 1.85 MeV Au ions to the fluence range of 1.5×1016 - 7×1016 cm−2. The implanted samples were annealed at 800 °C in an ammonia atmosphere for 20 minutes to support the nucleation of Au nanoparticles and prevent surface decomposition. The structural and optical properties of the samples were investigated by a combination of Rutherford backscattering spectroscopy in channeling mode (RBS-C), Transmission Electron Microscopy (TEM), Raman spectroscopy, photoluminescence (PL) and diffuse-reflectance spectroscopy (DRS). The two damaged regions, namely at the depth and at the surface, were identified. The depth region exhibits saturation of damage, unlike the surface region reaching an amorphous state for the highest implantation fluence. RBS-C revealed multimodal Au depth profiles for higher ion fluences, which were subsequently redistributed after thermal annealing due to the formation of Au nanoparticles, as confirmed by TEM. Au nanoparticles with fcc structure have been successfully synthesized with the Au-ion implantation fluence of 5×1016 cm−2 with the sizes mostly of 4 – 20 nm resulting in increased optical scattering and absorption within the spectral range of 500 – 700 nm associated with surface plasmon resonance (SPR) and the emergence of blue (2.8 eV) and red (2 eV) photoluminescence bands linked to the combined effect of SPR and implantation-induced defects.

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Damage Evolution in Gan under Mev Heavy Ion Implantation

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Wet etching of GaN damaged by heavy ion irradiation

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Study of Radiation Damage in Mg+-implanted GaN

Effect of Ion-Induced Damage on Ganas/Gaas Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Evolution of secondary defects in arsenic implanted Si

Evolution of Au nanoparticles in c-plane GaN under the heavy ion implantation and their optical properties

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Analysis of Implantation-Induced Damage and Amorphization of Gasb

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

High Pressure Processing of Ion Implanted GaN