Abstract:β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous potential for power-switching devices for next-generation high power electronics. The performance of such devices strongly relies on the precise control of electrical properties of β-Ga 2 O 3 , which can be achieved by implantation of dopant ions. However, a detailed understanding of the impact of ion implantation on the structure of β-Ga 2 O 3 remains elusive. Here, using aberration-corrected scanning transmission electron microscopy, we investigate the nature of structural damage in ion-implanted β-Ga 2 O 3 and its recovery upon heat treatment with the atomic-scale spatial resolution. We reveal that upon Sn ion implantation, Ga 2 O 3 films undergo a phase transformation from the monoclinic β-phase to the defective cubic spinel γ -phase, which contains high-density antiphase boundaries. Using the planar defect models proposed for the γ -Al 2 O 3 , which has the same space group as β-Ga 2 O 3 , and atomic-resolution microscopy images, we identify that the observed antiphase boundaries are the {100}1/4 ⟨110⟩ type in cubic structure. We show that post-implantation annealing at 1100 °C under the N 2 atmosphere effectively recovers the β-phase; however, nano-sized voids retained within the β-phase structure and a γ -phase surface layer are identified as remanent damage. Our results offer an atomic-scale insight into the structural evolution of β-Ga 2 O 3 under ion implantation and high-temperature annealing, which is key to the optimization of semiconductor processing conditions for relevant device design and the theoretical understanding of defect formation and phase stability.

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Characteristics of High-Energy N+-Implanted Damage in Gasb

Study of Radiation Damage in Mg+-implanted GaN

Optical properties of high energy N+-implanted GaSb

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Damage analysis of 25KeV As+ implantation into silicon with large tilt angles

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Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Surface Morphological and Compositional Changes of Gan Films Induced by Swift Heavy-Ion Irradiations

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A study of optical characteristics of damage in oxygen-implanted 6H-SiC

Strain Development and Damage Accumulation under Ion Irradiation of Polycrystalline Ge-Sb-Te Alloys

Characterization of Radiation Damage Induced by B and B4 Ion Implantation into Silicon

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Dislocation Analysis of Germanium Wafers under 1080 Nm Laser Ablation.

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