Abstract:Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures

Optical Spectroscopy Study of Damage Evolution in 6H-Sic by H2+ Implantation

Research on the Surface Damage of Si+ and H+ Co-Implanted 6H-Sic Before and after Annealing

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

A study of optical characteristics of damage in oxygen-implanted 6H-SiC

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Implantation temperature and thermal annealing behavior in H 2 + -implanted 6H-SiC

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Structural and Optical Properties of 6h–sic Helium-Implanted at 600 K

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-Sic

Evolution of Strain and Mechanical Properties Upon Annealing in He-implanted 6H-Sic

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Microstructural Investigation of Single Crystal 6H-SiC Irradiated by He+ Ions and Annealed after Post-irradiation

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation