Abstract:With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to further improve the development of the 4H-SiC crystal growth process, especially the initial stage of physical vapor transport (PVT) growth, which is a critical step to obtain high quality SiC crystals with polytype stability and low dislocation density. This paper describes a study on dislocation behavior of large diameter 4H-SiC crystals at the early stages of PVT growth. Synchrotron x-ray topography is applied to 6-inch PVT-grown crystals with a thickness of several hundred microns on 4H-SiC seeds. Grazing-incidence topographs in (g = 11overline{2}8) and (g = 1overline{1}09) recorded from both the seed crystal and newly grown layer show the presence of screw-type basal plane dislocations (BPDs) with (b = 1/3left[ {11overline{2}0} ight]) at the inner region of the wafers, which is further confirmed by comparing with ray tracing simulated images of these dislocations. Their origins are likely from deflection of threading edge dislocations (TEDs) onto the basal plane by the overgrowth of macro-steps. Pairs of threading screw/mixed dislocations (TSDs/TMDs) are found to be newly generated at the initial growth stage and some are deflected onto the basal plane. A high density of newly generated TEDs is observed in the early-grown crystals, which are either nucleated in pairs at the seed/crystal interface or converted from BPDs in the seed crystal. Furthermore, dislocations with unique shapes are observed and found to be associated with deflection of TMDs and TEDs, which become the major source for BPD generation during the early PVT growth stage. Possible models to explain their formation mechanism are developed.

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Pvt Growth of 6h Sic Crystals and Defect Characterization

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Crack Healing Behavior of 4H-Sic: Effect of Dopants

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals