The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Binjie Xu,Sheng'ou Lu,Hao Cui,Xiaodong Pi,Deren Yang,Xuefeng Han

DOI: https://doi.org/10.1039/d4ce00769g

IF: 3.756

2024-01-01

CrystEngComm

Abstract:The primary challenge for preparing SiC crystals during the PVT process is the fractures, especially with the increase in diameter (≧8 inches). In this study, the elastic-plastic behaviors of the...

What problem does this paper attempt to address?

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Guofeng Li,Wei Hang,Hongyu Chen,Rong Wang,Xiaodong Pi,Deren Yang,Julong Yuan

DOI: https://doi.org/10.1039/d3ce00984j

IF: 3.756

2024-01-01

CrystEngComm

Abstract:This study focuses on the generation and transformation of defects associated with subsurface damages (SSDs) in seed crystals during the physical vapor transport (PVT) growth of 4H-SiC crystals.
Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Binjie Xu,Xuefeng Han,Suocheng Xu,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1016/j.jcrysgro.2023.127238

IF: 1.8

2023-01-01

Journal of Crystal Growth

Abstract:Silicon carbide (SiC) has important application prospects in power and radio frequency (RF) devices. However, preparing large-diameter, high-quality SiC crystals is challenging. The major technique for growing large-diameter SiC crystals is the physical vapor transport (PVT) method and the key point for adjusting conditions is to find an optimal thermal field. In this study, we propose a resistance heating method called the "3 separation heater method" with 3 heaters separated by the graphite foam insulations so that 3 important parts (the SiC source powder area, SiC seed area, and seed holder) of the growth cell can be heated independently through thermal radiation from each separated heater. Further, the insulation separators play an important role as a switch of the heat flux. The numerical studies of the thermal field design for this model are conducted with the help of the numerical simulation software COMSOL Multiphysics and its appropriate parameters are explored. At last, the relationship between the parameters and crystal growth conditions, such as the radial temperature difference (RTD) and edge temperature gradient (ETG), is expressed by the back-propagation (BP) neural network and the optimal parameter values for crystal growth conditions have been confirmed using the non-dominated sorting genetic algorithm (NSGA-II).
Fracture Toughness Evaluation and Plastic Behavior Law of a Single Crystal Silicon Carbide by Nanoindentation

Amit Datye,Udo D. Schwarz,Hua-Tay Lin,Udo Schwarz

DOI: https://doi.org/10.3390/ceramics1010017

2018-09-18

Ceramics

Abstract:Nanoindentation-based fracture toughness measurements of ceramic materials like silicon carbide (SiC) with pyramidal indenters are of significant interest in materials research. A majority of currently used fracture toughness models have been developed for Vickers indenters and are limited to specific crack geometries. The validity of the indentation-cracking method for the fracture toughness measurement of single crystal SiC, the elastic-plastic anisotropy and orientation dependence around the c-axis when indented in the direction is examined using nanoindentation with different pyramidal indenters. The residual impressions are analyzed using scanning electron microscopy to measure the crack lengths and the validity of existing fracture toughness measurement methods and equations is analyzed. A combination of nanoindentation with different pyramidal indenters to produce a wide range of effective strains and finite element simulation is used to extract flow properties of single crystal SiC in the direction. It is observed that there is no orientation dependence around the c-axis when SiC-6H is indented in the direction with a Berkovich indenter, i.e., it is transversely isotropic. It is also found that for a Berkovich indenter, the Jang and Pharr model, which is based on the Lawn model for cone/halfpenny cracks, gives approximately constant values at low loads ( 1 N), the Laugier model gives constant fracture toughness values. Finite element analysis using equivalent cones is used along with measured hardness values to estimate the yield strength, the work hardening exponents and the stress–strain curve for single crystal SiC-6H in the direction.

English Else
Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Xiaoshuang Liu,Rong Wang,Junran Zhang,Yunhao Lu,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1361-6463/ac9535

2022-01-01

Journal of Physics D Applied Physics

Abstract:In this work, the anisotropic deformation and anisotropic mechanical properties of 4H silicon carbide (4H-SiC) single crystal wafers are proposed by using nanoindentation. The C face of a 4H-SiC wafer has higher hardness and lower fracture toughness than those of the Si face. Because the deformation of 4H-SiC is assisted by the nucleation and slip of basal plane dislocations (BPDs), especially the slip of Si-core partial dislocations (PDs) of the BPDs, the nucleation and slip of the Si-core PDs in the Si face of 4H-SiC is easier than those in the C face, which releases the nanoindentation-induced stress and results in the decrease of the hardness and increase of the fracture toughness of the Si face of 4H-SiC wafers. Due to the hexagonal lattice of 4H-SiC, the hardness along < 1<(1)over bar>00 > of 4H-SiC is higher than that along < 11<(2)over bar>0 >, but the fracture toughness along the < 1<(1)over bar>00 > is lower than that along the < 11<(2)over bar>0 >, as a result of the enhanced glide of dislocations along the most closely-packed direction. The insights gained in this work are expected to shed light on the optimization of the mechanical processing of 4H-SiC wafers.
Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Hao Luo,Xuefeng Han,Yuanchao Huang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.3390/cryst11121581

IF: 2.7

2021-01-01

Crystals

Abstract:SiC crystal is an excellent substrate material for high power electronic devices and high-frequency electronic devices. Being cost-effective and defect-free are the two biggest challenges at present. For the physical vapor transport (PVT) growth of a SiC single crystal, SiC powder is used as the source material, which determines the cost and the quality of the crystal. In this paper, we propose a new design in which graphite blocks are substituted for the non-sublimated SiC powder. Temperature distribution in the SiC powder, the evolution of the SiC powder, and the vapor transport are investigated by using finite element calculations. With the addition of graphite blocks, the utilization and sublimation rate of SiC powder is higher. In addition, the reverse vapor transport above the SiC powder is eliminated. This design provides a new idea to reduce the cost of SiC crystals in industrialization.
Fracture behaviors of Al2O3-SiC composites containing various sizes and fraction of fine SiC particles

Dahai Zhang,Hui Yang,Ruilian Yu,Honghua Kan,wen jian weng,man zhen ge

1997-01-01

Key Engineering Materials

Abstract:Mechanical properties of Al2O3-SiC composites containing a wide range of volume fraction from 0.05 to 2.5��m SiC particles were investigated by indentation techniques. The mechanisms for the toughening and strengthening of the composites were discussed. ? 1997 Trans Tech Publications.
Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Shengtao Zhang,Guoqing Fu,Hongda Cai,Junzhi Yang,Guofeng Fan,Yanyu Chen,Tie Li,Lili Zhao

DOI: https://doi.org/10.3390/ma16020767

IF: 3.4

2023-01-13

Materials

Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Eliciting stable nanoscale fracture in single-crystal silicon

Frank W. DelRio,Scott J. Grutzik,William M. Mook,Sara M. Dickens,Paul G. Kotula,Eric D. Hintsala,Douglas D. Stauffer,Brad L. Boyce

DOI: https://doi.org/10.1080/21663831.2022.2088251

2022-07-01

Materials Research Letters

Abstract:In this letter, we demonstrated stable nanoscale fracture in single-crystal silicon using an in-situ wedge-loaded double cantilever beam (DCB) specimen. The fracture toughness K IC was calculated directly from instrumented measurement of force and displacement via finite element analysis with frictional corrections. Measurements on multiple test specimens were used to show K IC = 0.72 ± 0.07 MPa m 1/2 on {111} planes and observe the crack-growth resistance curve in <500 nm increments. The exquisite stability of crack growth, instrumented measurement of material response, and direct visual access to observe nanoscale fracture processes in an ideally brittle material differentiate this approach from prior DCB methods. GRAPHICAL IMPACT STATEMENT In-situ fracture toughness experiments on single-crystal silicon revealed stable nanoscale fracture and identified the shape of the crack-growth resistance curve, role of fabrication-induced artifacts, and origin of fracture surface features.

materials science, multidisciplinary
Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method

Liu Guangliang

Abstract:Three kinds of classical growth morphologies appearing in the physical vapor transport(PVT) growth process of silicon carbide bulk crystal are analyzed with regard to thermal stress by finite elements method.The results indicate that the maximum of thermal stress is located in the adjacent region of the silicon carbide and the graphite crucible lid.The distributions of the temperature field,and the corresponding thermal strain field and equivalent stress field get more homogenous in the flat growth morphology than that in the concave and convex growth morphology.And stress concentration appears at the center of the concave growth morphology and at the margin of the convex growth morphology.For improving the crystal quality,transition layer of silicon carbide formed by deposition or reaction on the graphite crucible lid is suggested to reduce the thermal stress,and the growth system of SiC crystal should be modified to maintain crystal growth in the flat morphology.

Physics,Engineering,Materials Science
Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process

Binbin Meng,Chen Li

DOI: https://doi.org/10.1016/j.jare.2023.04.004

Abstract:Introduction: Monocrystal SiC is representative of the third generation semiconductor materials, the efficient process technology of 6H-SiC wafer have always been a hot topic. Developing a SPDT processing method based on brittle removal mode with controllable surface/subsurface damage is an important approach to solve the processing difficulties of 6H-SiC. Objectives: This work aims to analyze the brittle removal process and fully explain the brittle separation behavior and deformation mechanism of 6H-SiC. The micro-scale crack propagation and the effect of anisotropy on crack distribution during machining process are investigated. Methods: Large-scale molecular dynamics simulation was used in this work. Results: Under the condition of brittle removal, shear fracture occurs in the front area of tool tip. Shear plane is high-index surface, independent of slip system. The location of tensile fracture is the cleavage plane of hexagonal system, and the fracture surface is composed of step-like joint planes or perfect plane structures. Cracks with self-healing capability appear in the area behind the tool when the surface to be machined is basal plane. When the surface to be machined is not basal plane, a large number of dislocations or cracks remain in subsurface region. Under brittle removal mode, a large amount of plastic deformation appears as well, and deformation mode is related to processing scheme. Conclusion: The brittle removal behavior of 6H-SiC under SPDT process has obvious anisotropy. Basal plane is more suitable for brittle removal of 6H-SiC without residual damage such as sub-surface cracks. The crack behind the tool generated by cleavage fracture can be repaired by itself. Fracture behavior is not related to dislocation. The processing method parallel to the c-axis can cause the generation of a large number of surface cracks. The (011¯0)/[21¯1¯0] and (112¯0)/[11¯00] mode is the best way to achieve plastic removal of 6H-SiC during SPDT process.
Fracture of a silicon nanowire at ultra-large elastic strain

Hongti Zhang,Ka-Yu Fung,Yu Zhuang,Ke Cao,Jian Song,Alice Hu,Yang Lu

DOI: https://doi.org/10.1007/s00707-017-2015-0

IF: 2.645

2017-12-23

Acta Mechanica

Abstract:Understanding the fracture behavior of one-dimensional (1-D) nanomaterials is critical for their functional device applications and maximizing their service life. At the nanoscale, solid materials’ fracture properties could significantly deviate from their bulk counterparts. Our recent study (Zhang et al. in Sci. Adv. 2(8):e1501382, 2016. 10.1126/sciadv.1501382) showed that silicon (Si) nanowires, one of the most important functional 1-D nanomaterials for nanoelectronics and nano-electro-mechanical systems, demonstrated distinctly different mechanical properties than microscale and bulk Si crystals with the elastic strain up to 10% or even more, approaching their theoretical elastic limit. It is therefore intriguing to understand the fracture behavior of a Si nanowire under such deep ultra-strength, as well as their failure mechanisms. In this work, we will experimentally study the fracture behavior of ultrahigh elastic Si nanowires in situ and quantitatively understand their fracture mechanics with the assist of molecular dynamics simulations. The insights obtained in this nanomechanical study may be of help on the development of robust Si nanowire-based mechatronic devices.

mechanics
On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Jiahao Hu,Yang He,Zhen Li,Liangchi Zhang

DOI: https://doi.org/10.1016/j.wear.2023.204871

IF: 4.695

2023-03-31

Wear

Abstract:SiC is an important semiconductor but is difficult to machine due to its high hardness and low fracture toughness. The deformation mechanisms of SiC subjected to single-point cutting is so far unclear. This paper aims to clarify such mechanisms by carrying out experimental investigations at similar length and load scales to those based on molecular dynamics. To this end, nano-scratching tests were conducted on AFM. Diamond AFM tips of the radius of 10 nm and 60 nm were used as the single-point nano-scratching tool on the surfaces of 4H–SiC and 6H–SiC single crystals with oxide amorphous layer. The nano-grooves were then examined under AFM and SEM, and the damages in the cross-sectional subsurfaces were analyzed by HRTEM. The investigation revealed that under the nano-scratching load less than 20 μN and nano-grooving depth below 10 nm, which are consistent with the conditions used in molecular dynamics analyses, the subsurface deformation was mainly caused by amorphous phase transformation. Dislocations were rarely found and no crack emerged. This study then identified that under nano-scratching, the main mechanism of material removal of a single crystalline SiC is via amorphous phase transformation.

engineering, mechanical,materials science, multidisciplinary
Numerical Simulation of the Mechanical Properties and Fracture of SiCp/6061Al Composite Materials Based on Microstructure

Hengye Wang,Guoliang Ji,Yongheng Xue,Yandong Liu

DOI: https://doi.org/10.3390/met13061016

IF: 2.695

2023-05-26

Metals

Abstract:SiCp/6061Al composites with volume fractions of 5%, 10%, and 15% were prepared by the vacuum hot pressing sintering. Their microstructure and fracture morphology were observed and analyzed with an optical microscope and a scanning electron microscope. The elastic–plastic behavior of the 6061Al matrix in the composites was studied by using the load–displacement curve obtained by the nanoindentation test, and the plastic constitutive equation was established. The representative volume element (RVE) model was established based on the geometric characteristics of the SiC particles identified by using image processing technology from the metallographic structure. The deformation and fracture process of the SiCp/6061Al composites under the uniaxial tensile load was simulated microscopically, and the microscopic deformation and fracture characteristics and mechanical properties of SiCp/6061Al composites under different interface strengths and different SiCp volume fractions were revealed.

materials science, multidisciplinary,metallurgy & metallurgical engineering
The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density

Chengyuan Sun,Yunfei Shang,Zuotao Lei,Yujian Wang,Hao Xue,Chunhui Yang,Yingmin Wang

DOI: https://doi.org/10.3390/ma17102192

2024-05-07

Abstract:The basal plane dislocation (BPD) density is one of the most important defects affecting the application of SiC wafers. In this study, numerical simulations and corresponding experiments were conducted to investigate the influence of cooling processes, seed-bonding methods, and graphite crucible materials on the BPD density in an 8-inch N-type 4H-SiC single crystal grown by the physical vapor transport (PVT) method. The results showed that the BPD density could be effectively reduced by increasing the cooling rate, optimizing the seed-bonding method, and adopting a graphite crucible with a similar coefficient of thermal expansion as the SiC single crystal. The BPD density in the experiments showed that a high cooling rate reduced the BPD density from 4689 cm-2 to 2925 cm-2; optimization of the seed-bonding method decreased the BPD density to 1560 cm-2. The BPD density was further reduced to 704 cm-2 through the adoption of a graphite crucible with a smaller thermal expansion coefficient.
Simulation Of Near-Crack-Tip Strain Fields On Single-Crystal Silicon Wafer

J. J. Li,C. W. Zhao,Y. M. Xing,Z. Y. Lv,Y. G. Du

DOI: https://doi.org/10.4028/www.scientific.net/AMR.430-432.404

2012-01-01

Abstract:The failure components made of silicon is an important issue in the electronic and nano-technological developments. A study on the near-crack-tip deformation of single-crystal silicon wafer under tensile load was presented. The strain formulas around the crack tip of mode I crack were deduced from linear elastic fracture mechanics. The strain fields around the crack tip were simulated and analyzed in detail.
Damage characteristics and material removal mechanisms of CVD-SiC in nanotests: A comparative with sintered SiC

Jingguo Zhou,Bin Lin,Jiaxiang Xue,Sigong Li,Yehong Liao,Pengcheng Zhao,Tianyi Sui

DOI: https://doi.org/10.1016/j.ijrmhm.2023.106460

IF: 4.804

2023-10-29

International Journal of Refractory Metals and Hard Materials

Abstract:High sensitivity to crack and damage of chemical vapor-deposited silicon carbide (CVD- SiC) restricts the high-efficiency and low-damage manufacturing of CVD-SiC components. This paper aims to reveal the damage and material removal mechanisms of CVD-SiC after being scratched by diamond abrasives. The mechanical properties, scratching force, depth of ductile-brittle transition, residual depth and material removal damages of the CVD-SiC were discussed by the indentation, nano-scratching experiments, and compared with sintered silicon carbide (SSiC) ceramics. The results demonstrated that the mechanical properties of CVD-SiC are better than SSiC. In terms of hardness and fracture toughness, CVD-SiC demonstrates a 10– 20% and 20– 30% higher level of performance than SSiC, respectively. SSiC exhibits a brittleness level approximately 30% higher than that of CVD-SiC. SSiC ceramics are prone to crack deflection, intergranular fracture and transgranular fracture during indentation, indicating a higher propensity for brittle fracture in SSiC. The crack propagation in CVD-SiC is relatively regular. Both materials undergo the ductile, ductile-brittle transition and brittle stage, and the fluctuation variability of CVD-SiC material is notably lower than that of SSiC during the brittle stage. Compared with SSiC, the residual depth, groove width and transverse force of CVD-SiC are smaller under the same normal load. The critical depth of ductile-brittle transition of CVD-SiC is about 2 times that of SSiC in experimental and theoretical, indicating that CVD-SiC easily achieves ductile grinding. The mechanical properties, crack system and crystal structure of the CVD-SiC and SSiC materials cause the divergences in brittle removal. The radial-median crack system dominates the material removal of CVD-SiC. The disparity of deformations on the inside and outside of the crystal in the brittle stage leads to significant fluctuation variability of force and depth of SSiC during the scratching.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

Shan Shan Hu,Shuai Fang,Ya Fei Liu,Qian Yu Cheng,Hong Yu Peng,Ze Yu Chen,Yu Han Gao,Chao Gao,Balaji Raghothamachar,Michael Dudley

DOI: https://doi.org/10.4028/p-6dx2v3

2023-05-27

Materials Science Forum

Abstract:Publication date: 26 May 2023 Source: Materials Science Forum Vol. 1089 Author(s): Shan Shan Hu, Shuai Fang, Ya Fei Liu, Qian Yu Cheng, Hong Yu Peng, Ze Yu Chen, Yu Han Gao, Chao Gao, Balaji Raghothamachar, Michael Dudley In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic slip is often observed in single crystals grown by the physical vapor transport method as the diameter expands to 6 inches or larger. Thermal modeling has shown that occurrence of prismatic slip is attributed to increased radial thermal gradients. While X-ray topography can be used to characterize the presence and extent of prismatic slip, the feasibility of using the chemical etching method to assess the extent of prismatic slip in an industrial setting is investigated. The distribution of scallop shaped etch pits oriented along the directions that correspond to prismatic dislocations, correlate well with the results of the thermal model that predicts the occurrence of prismatic slip dislocations. This capability of the etch pit method to characterize prismatic slip can be used to manage radial thermal gradients during PVT growth.
A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Zhiqiang Fan,Jiaxin Zhang,Zhuoqun Wang,Chong Shan,Chenguang Huang,Fusheng Wang

DOI: https://doi.org/10.3390/pr12122696

IF: 3.5

2024-12-01

Processes

Abstract:Silicon carbide (SiC) stands out for its remarkable hardness, thermal stability, and chemical resistance, making it a critical material in advanced engineering applications, particularly in power electronics, aerospace, and semiconductor industries. However, its inherent brittleness and relatively low fracture toughness pose significant challenges during precision manufacturing processes, particularly during the laser stealth dicing—a pivotal process for wafer separation. This review provides a comprehensive analysis of the fracture toughness of SiC, exploring its dependence on microstructural factors, such as grain size, fracture mode (transgranular vs. intergranular), and toughening mechanisms, including the crack deflection and bridging. The effects of temperature and mechanical anisotropy on the fracture resistance of SiC are discussed. Particular attention is given to how SiC's low fracture toughness and brittle nature affect the controlled crack propagation critical to the dicing process. The review synthesizes key experimental findings from various fracture-toughness measurement techniques, highlighting their relevance for optimizing the laser processing parameters. By linking the fracture mechanics of SiC to its performance in laser stealth dicing, this review provides critical guidance for enhancing the process, ensuring greater efficiency and reliability in SiC wafer separation for advanced technologies.

engineering, chemical
How Does Pore-Induced Crack Change As Temperatures Decrease from 293 K to 77 K?

Sai Wei,Zhipeng Xie,Weijiang Xue,Jingya Gui,Juan Chen

DOI: https://doi.org/10.1016/j.ceramint.2015.07.200

IF: 5.532

2015-01-01

Ceramics International

Abstract:The pore-induced cracks in pressureless-sintered SiC ceramics have been investigated at ambient and cryogenic temperatures. The Weibull plots of flexural strength were determined to compare the effects of pore-induced cracks on fracture behavior at 77K and 293K. The stress field near crack tip was investigated based on the microstructure of sintered SiC. The measurements of lattice constants of single crystal SiC were carried out by in situ X-ray diffraction. It was found that the effect of defect-induced crack on fracture was diminished at cryogenic temperatures, owing to the decreases of cracks׳ effective size and increases of propagate resistance. The improved fracture reliability and enhanced flexural strength of SiC ceramics facilitate their applications in space-based reflectors.
Effect of crystal orientation and temperature on the mechanical properties and fracture mechanism of silicon carbide nanowires

Mengan Cao,Zhaofeng Chen,Le Lu,Shijie Chen,Zhudan Ma,Lixia Yang

DOI: https://doi.org/10.1007/s11051-023-05899-9

IF: 2.533

2023-11-23

Journal of Nanoparticle Research

Abstract:Silicon carbide nanowires (SiC NWs) are widely used as reinforcing materials in composite materials based on ceramics, metals, and polymers, and their high-temperature mechanical properties have become a focus of attention. In this paper, the effect of temperature and crystal orientation on the tensile mechanical behavior of SiC NWs was explored through molecular dynamics simulation. It is observed that the fracture mode and mechanical properties of SiC NWs express a significant temperature dependence. Both critical stress and Young's modulus of nanowires with different orientations decrease with increasing temperature and the [111]- and [112]-oriented nanowires exhibit brittle fracture characteristics at low temperatures and become ductile fractures at high temperatures. The transition temperature for ductile–brittle fracture is between 1300-1800 K. The fracture surfaces of SiC NWs with different orientations are all {111} planes at low temperatures. This study provides theoretical support for SiC NWs' laboratory growth and toughening mechanism research.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Fracture Toughness Evaluation and Plastic Behavior Law of a Single Crystal Silicon Carbide by Nanoindentation

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Fracture behaviors of Al2O3-SiC composites containing various sizes and fraction of fine SiC particles

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Eliciting stable nanoscale fracture in single-crystal silicon

Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method

Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process

Fracture of a silicon nanowire at ultra-large elastic strain

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Numerical Simulation of the Mechanical Properties and Fracture of SiCp/6061Al Composite Materials Based on Microstructure

The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density

Simulation Of Near-Crack-Tip Strain Fields On Single-Crystal Silicon Wafer

Damage characteristics and material removal mechanisms of CVD-SiC in nanotests: A comparative with sintered SiC

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

How Does Pore-Induced Crack Change As Temperatures Decrease from 293 K to 77 K?

Effect of crystal orientation and temperature on the mechanical properties and fracture mechanism of silicon carbide nanowires