Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Comparing basal and prismatic slips induced by thermal stresses in 4H-SiC crystal

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Origins and characterization techniques of stress in SiC crystals: A review

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC