Abstract:Silicon carbide (SiC) emerges as a promising ceramic material for high-temperature structural applications, especially within the aerospace sector. The utilization of SiC-based ceramic matrix composites (CMCs) instead of superalloys in components like engine shrouds, combustors, and nozzles offers notable advantages, including a 25% improvement in fuel efficiency, over 10% enhanced thrust, and the capability to withstand up to 500$^{\circ}$C higher operating temperatures. Employing a CALPHAD-reinforced multi-phase-field model, our study delves into the evolution of the SiC layer under isothermal solidification conditions. By modeling the growth of SiC between liquid Si and solid C at 1450$^{\circ}$C, we compared results with experimental microstructures and quantitatively examined the evolution of SiC thickness over time. Efficient sampling across the entire model space mitigated uncertainty in high-temperature kinetic parameters, allowing us to predict a range of growth rates and morphologies for the SiC layer. The model accounts for parameter uncertainty stemming from limited experimental knowledge and successfully predicts relevant morphologies for the system. Experimental results validated the kinetic parameters of the simulations, offering valuable insights and potential constraints on the reaction kinetics. We further explored the significance of multi-phase-field model parameters on two key outputs, and found that the diffusion coefficient of liquid Si emerges as the most crucial parameter significantly impacting the SiC average layer thickness and grain count over time. This study provides valuable insights into the microstructure evolution of the Si-C binary system, offering pertinent information for the engineering of CMCs in industrial applications.

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide

Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions

Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Effects of the Porosity of the Source Materials on the Initial Growth of 6H-Sic Crystal

Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method

Effects of grain size of source material on growing 6H-SiC bulk crystal by physical vapor transport

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Mass Loss in SiC Crystal Growth Process

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition

A Hydrodynamics Model of Silicon Carbide Single Crystal Growth by PVT and Finite Element Analysis

Nucleation and Growth of Polycrystalline SiC

Effects of additive carbon source on growth of SiC single crystal