Abstract:With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to further improve the development of the 4H-SiC crystal growth process, especially the initial stage of physical vapor transport (PVT) growth, which is a critical step to obtain high quality SiC crystals with polytype stability and low dislocation density. This paper describes a study on dislocation behavior of large diameter 4H-SiC crystals at the early stages of PVT growth. Synchrotron x-ray topography is applied to 6-inch PVT-grown crystals with a thickness of several hundred microns on 4H-SiC seeds. Grazing-incidence topographs in (g = 11overline{2}8) and (g = 1overline{1}09) recorded from both the seed crystal and newly grown layer show the presence of screw-type basal plane dislocations (BPDs) with (b = 1/3left[ {11overline{2}0} ight]) at the inner region of the wafers, which is further confirmed by comparing with ray tracing simulated images of these dislocations. Their origins are likely from deflection of threading edge dislocations (TEDs) onto the basal plane by the overgrowth of macro-steps. Pairs of threading screw/mixed dislocations (TSDs/TMDs) are found to be newly generated at the initial growth stage and some are deflected onto the basal plane. A high density of newly generated TEDs is observed in the early-grown crystals, which are either nucleated in pairs at the seed/crystal interface or converted from BPDs in the seed crystal. Furthermore, dislocations with unique shapes are observed and found to be associated with deflection of TMDs and TEDs, which become the major source for BPD generation during the early PVT growth stage. Possible models to explain their formation mechanism are developed.

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Physical Vapor Transport Growth of 4H-Sic on {000-1} Vicinal Surfaces

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Reduction of Threading Screw Dislocations in 4H-Sic Crystals by Physical Vapor Transport Growth

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Investigation on Dislocation and Deflection Morphology of PVT-grown On-Axis 4H-Sic Crystals

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

(Invited) Defects in Cast-Mono Crystalline Silicon

Vapor Deposition Growth of SiC Crystal on 4H-SiC Substrate by Molecular Dynamics Simulation

Defect Reduction in SiC Growth Using Physical Vapor Transport

Generation and Suppression of Misfit Dislocations at the Seed/crystal Interface in Si Bulk Crystal Growth

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC