Abstract:Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. In recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrast of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Reduction of Threading Screw Dislocations in 4H-Sic Crystals by Physical Vapor Transport Growth

Defect Reduction in SiC Growth Using Physical Vapor Transport

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Investigation on Dislocation and Deflection Morphology of PVT-grown On-Axis 4H-Sic Crystals

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment