Abstract:The occurrence of scratches on silicon wafers during chemical mechanical polishing (CMP) is a common phenomenon that significantly affects the structural stability and electrical characteristics of integrated circuits. The complex interplay between abrasives, inorganic and organic substances in an aqueous environment, and the iterative evolution of surface morphology, collectively contribute to the limited understanding of CMP-induced scratches. This paper explores the full-plane scratch shape, directions, and number density on different crystal orientations, the microscopic form of scratches with plastic and brittle features for Si(111), Si(110), and Si(100) by the diamond particle doping method. The CMP scratches observed by profilometry display a plastic-like morphology and show no directional preference, irrespective of crystal orientation. The Si(110) exhibits the fewest scratches, while Si(111) has the most, with the volume modulus being a significant factor in this variation. The nature of CMP scratches, the material removal process due to polishing slurries, and the smoothing effect of hillock abrasion and by-product refilling are substantiated by an atomic force microscope and a high-resolution transmission electron microscope. During CMP, the relaxation effect of water solvent and hydrated oxide layer mitigates the hard touching between abrasives and silicon wafer, reducing the brittleness of silicon and the depth of sub-surface damage. The height of scratch hillocks is reduced through continuous scratching of polishing abrasives, and the bottom of scratches is covered by amorphous silica and a small amount of polycrystal silicon. The Fourier transform of transmission electron microscopic images shows the quasi-plastic nature of CMP scratches, indicating the disparity of filling materials between CMP scratches and scratches generated in dry air. This work highlights the distinct nature of CMP scratches, offering insights for guiding the manufacturing of defect-free ultrasmooth silicon wafers.

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Subsurface Damage Detection on Ground Silicon Wafers Using Polarized Laser Scattering

Defect Appearance on 4H-Sic Homoepitaxial Layers Via Molten KOH Etching

Rapid subsurface damage detection of SiC using inductivity coupled plasma

Investigating the Partial Plastic Formation Mechanism of Typical Scratches on Silicon Wafers Induced by Rogue Particles During Chemical Mechanical Polishing

Eliminating of Subsurface Damage Structure

Two-dimensional Detection of Subsurface Damage in Silicon Wafers with Polarized Laser Scattering

Characterizing subsurface damage in loose abrasive grinding of fused silica glass

Hydrogen etching of 4H–SiC(0001) facet and step formation

Sensitivity of Polarized Laser Scattering Detection to Subsurface Damage in Ground Silicon Wafers

Experimental investigation on subsurface damage depth of ground silicon wafers in wafer-rotating grinding

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Characterization of Obtuse Triangular Defects on 4H-Sic 4° Off-Axis Epitaxial Wafers

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

A Load Identification Method for the Grinding Damage Induced Stress (GDIS) Distribution in Silicon Wafers