Abstract:Silicon carbide (SiC) devices have shown substantial promise in realizing ultrahigh-voltage and high power, and have been usually considered as a potential candidate for high radiation levels applications. However, in this work it is found that the SiC P-intrinsic-N (PiN) diodes are sensitive to the electron irradiation, which exerts significant influence on the device characteristics. The physical mechanisms behind these behaviors are studied by probing the production of point defects and the evolution of carrier lifetime in the SiC epilayers after irradiation. It is found that the forward current is significantly reduced by irradiation and the specific on-resistance monotonously increases with the increasing electron fluences, which is resulted from the deteriorated conductivity modulation effects in the epilayer due to the enhanced carrier recombination from the radiation induced deep-level defects, such as the carbon vacancy (VC), silicon vacancy (VSi) and VC+VSi complexes. Inversely, no significant change is observed in the reverse leakage current of 4H-SiC PiN diodes, and the breakdown voltage even slightly increases after electron irradiation, which are ascribed to the suppressed carrier generation arising from the point defects in 4H-SiC with a wide bandgap and the carrier-removal effects caused by the acceptor like point defects generated during irradiation, respectively.

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Understanding the Breakdown Asymmetry of 4H-Sic Power Diodes with Extended Defects at Locations along Step-Flow Direction

Reduction of Morphological Defects in 4H-Sic Epitaxial Layers

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Influences of Icp Etching Damages on the Electronic Properties of Metal Field Plate 4H-Sic Schottky Diodes

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Cathodoluminescence Study of 3C-Sic Epilayers Grown on 4H-Sic Substrates

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Influence of Defects in SiC (0001) on Epitaxial Graphene

Epitaxial Growth of 4H-Sic on 4° Off-Axis Substrate for Power Devices

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Defect reduction in SiC epilayers by different substrate cleaning methods