Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Yicheng Pei,Weilong Yuan,Yunkai Li,Ning Guo,Xiuhai Zhang,Xingfang Liu

DOI: https://doi.org/10.3390/mi15060665

IF: 3.4

2024-05-22

Micromachines

Abstract:To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers.

nanoscience & nanotechnology,instruments & instrumentation,physics, applied,chemistry, analytical

What problem does this paper attempt to address?

### Problems the Paper Aims to Solve This paper aims to address the issue of surface morphology defects during the epitaxial growth of 4H-SiC. Specifically, the study systematically explores the impact of various key factors (such as the carbon-to-silicon ratio, growth time, application of buffer layers, hydrogen etching, and other process parameters) on the defect density of the epitaxial layer, seeking methods to effectively suppress these defects. #### Main Findings: 1. **Impact of Carbon-to-Silicon Ratio (C/Si Ratio)**: - When the carbon-to-silicon ratio is precisely controlled at 0.72, the defect density of the epitaxial layer is the lowest, and the surface smoothness is optimal. 2. **Impact of Growth Time**: - As the growth time increases from 10 minutes to 25 minutes, the defect density gradually decreases and reaches its lowest point at 25 minutes; however, when the growth time is extended to 40 minutes, the defect density abnormally increases. 3. **Role of Buffer Layer**: - Growing a buffer layer under specific conditions can effectively reduce defects, especially surface morphology defects. However, the effect of a homogenous buffer layer is not significant and instead prolongs the overall growth time, increasing the number of fall-off defects. 4. **Impact of Hydrogen Etching**: - Appropriate hydrogen etching can optimize surface quality, but excessive etching may expose substrate defects. Therefore, in practical applications, hydrogen etching conditions need to be carefully controlled to avoid adverse effects. These findings provide important guidance for optimizing the quality of the epitaxial layer.

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