Abstract:Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC is almost the most popular polytype as it possesses a suitable band-gap and high electron saturated drift velocity. In order to produce 4H-SiC power devices with a high barrier voltage of over several thousand volts, the minority carrier lifetime of 4H-SiC single crystals must be carefully managed. In general, both bulk defects and surface defects in 4H-SiC can reduce the minority carrier lifetime. Nevertheless, as surface defects have received less attention in publications, this study reviews surface defects in 4H-SiC. These defects can be classified into a number of categories, such as triangle defect, pit, carrot, etc. This paper discusses each one individually followed by the introduction of industrially feasible methods to characterize them. Following this, the impact of surface defects on the minority carrier lifetime is analyzed and discussed. Finally, a particular emphasis is put on discussing various passivation schemes and their effects on the minority carrier lifetime of 4H-SiC single crystals. Overall, this review paper aims to help young researchers comprehend surface defects in 4H-SiC single crystal material.

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Reduction of Morphological Defects in 4H-Sic Epitaxial Layers

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Epitaxial Growth of 4H-Sic on 4° Off-Axis Substrate for Power Devices

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Defect reduction in SiC epilayers by different substrate cleaning methods

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Influence of Defects in SiC (0001) on Epitaxial Graphene