Abstract:Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC is almost the most popular polytype as it possesses a suitable band-gap and high electron saturated drift velocity. In order to produce 4H-SiC power devices with a high barrier voltage of over several thousand volts, the minority carrier lifetime of 4H-SiC single crystals must be carefully managed. In general, both bulk defects and surface defects in 4H-SiC can reduce the minority carrier lifetime. Nevertheless, as surface defects have received less attention in publications, this study reviews surface defects in 4H-SiC. These defects can be classified into a number of categories, such as triangle defect, pit, carrot, etc. This paper discusses each one individually followed by the introduction of industrially feasible methods to characterize them. Following this, the impact of surface defects on the minority carrier lifetime is analyzed and discussed. Finally, a particular emphasis is put on discussing various passivation schemes and their effects on the minority carrier lifetime of 4H-SiC single crystals. Overall, this review paper aims to help young researchers comprehend surface defects in 4H-SiC single crystal material.

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Epitaxial Growth of 4H-Sic on 4° Off-Axis Substrate for Power Devices

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Influence of the Etching Process on the Surface Morphology of 4H-Sic Substrate Used in the Epitaxial Graphene

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC

Hydrogen Assisted Growth Of High Quality Epitaxial Graphene On The C-Face Of 4h-Sic

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes