Abstract:Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been employed to study defect production, clustering and their evolution within high energy displacement cascades in semiconductors. Based on the MD results, the damage density within a cascade core is evaluated, and used to describe a new energy partition function. In addition, we have further developed a model to determine the non-ionizing energy loss (NIEL) for semiconductors, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The atomic-level based NIEL model has been applied to GaAs and GaN. At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters in GaAs, but a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies higher than 2 keV. However, a large number of atoms will be displaced during the collisional phase with a compacted cascade volume in GaN, and consequently, a great number of displaced atoms recombine significantly with vacancies at the same time, i.e., a pseudo-metallic behavior (PMB). This leads to the result that the majority of surviving defects are just single interstitials or vacancies for all recoil energies considered with only a small number of defects forming clusters. The total number of defects simulated in GaN can be very well predicted by the simplied Norgett, Robison and Torrens (NRT) formula due to the PMB, in contrast to GaAs where the defect number becomes much larger than the NRT value. The calculated NIEL in GaN is often found smaller than that predicted by a model based on the simple Kinchin-Pease formula. The comparisons of defect creation, density and effective NIEL in GaN to those of GaAs suggest that GaN may be much more resistant to displacement damage than GaAs, and therefore, very suitable for use in high-power space-energy systems and space-probe applications.

Characteristics of High-Energy N+-Implanted Damage in Gasb

Analysis of Implantation-Induced Damage and Amorphization of Gasb

Optical properties of high energy N+-implanted GaSb

Study of Radiation Damage in Mg+-implanted GaN

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Radiation-induced Damage in GaP by MeV Helium Ions

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Damage Evolution in Gan under Mev Heavy Ion Implantation

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Effect of Ion-Induced Damage on Ganas/Gaas Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles

Atomic-level based non-ionizing energy loss: an application to GaAs and GaN semiconductor materials

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Damage Production and Annealing During Mev He Ion Rbs/Channeling Analysis of Gap

Investigation of GaAs Wafer Surface Blistering by Hydrogen Implantation

Characteristics of N-Gan after ICP Etching

Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique