Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Investigation of GaAs Wafer Surface Blistering by Hydrogen Implantation

Investigation of GaAs wafer surface blistering by hydrogen implantation

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Surface blistering and void swelling of α-Al2O3 irradiated with H2+ ions followed by 1000, 1200 °C annealing

Blister formation in He-H co-implanted InP: A comprehensive atomistic study

Molecular Dynamics Study on Splitting of Hydrogen-Implanted Silicon in Smart-Cut® Technology

Deuterium Blistering in Tungsten and Tungsten Vanadium Alloys

Thermodynamics of Ion-Cutting of β-Ga 2 O 3 and Wafer-Scale Heterogeneous Integration of a β-Ga 2 O 3 Thin Film onto a Highly Thermal Conductive SiC Substrate

Surface Modification of W–V Alloy Exposed to High Heat Flux Helium Neutral Beams

Irradiation hardening induced by blistering in tungsten due to low-energy high flux hydrogen plasma exposure

The Study on Defects of Germanium-on-Insulator Fabricated by a Low Temperature Smart-Cut Process

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Characteristics of High-Energy N+-Implanted Damage in Gasb

Rapid Thermal Annealing Effect on Gaasbi/Gaas Single Quantum Wells Grown by Molecular Beam Epitaxy

Analysis of Implantation-Induced Damage and Amorphization of Gasb

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Effect of surface orientation on blistering of copper under high fluence keV hydrogen ion irradiation

Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention

Mechanisms of helium irradiation blistering and surface deformation in tungsten

Damage Evolution in Gan under Mev Heavy Ion Implantation