Abstract:Germanium-based devices with high electron/hole mobility at low temperature have extensive application value in the detection field. Among them, high purity germanium (HPGe) detectors are a kind of γ-ray detector with the highest energy resolution. The germanium passivation is the bottleneck restricting the development of germanium-based devices. In this article, we study the mechanism of germanium oxynitride (GeOxNy) passivation layer to realize low surface defects of Ge-based devices and HPGe detector. To establish the optimal experimental conditions and passivation mechanism, GeOxNy films were prepared by magnetron sputtering in different O2/N2 ratios. Then, the surface defects of Ge/GeOxNy is analyzed by constructing Al/GeOxNy/Ge MOS devices. Their electrical characteristics were tested at room temperature and 77K. The interface state density (Dit) reflected the surface defects with passivation. The border traps between the GeOxNy/Ge surface were the most important factor causing the Dit to increase at 77K. The highest minority lifetime of 16.588 μs shows that GeOxNy film can effectively reduce interface defects. The leakage current and energy resolution of HPGe detector were further tested after GeOxNy passivation, which achieved a relatively higher energy resolution. This exploration of GeOxNy films gives potential applications for the surface modification of Ge-MOS devices and HPGe detectors.

The Study on Defects of Germanium-on-Insulator Fabricated by a Low Temperature Smart-Cut Process

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Evaluation of the mechanical properties of germanium-on-insulator (GeOI) films by Raman spectroscopy and nanoindentation

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

The Interfacial Defects Characteristic and Low-Temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge- Based Mos Device and High Purity Germanium Detectors

Formation of Thin Germanium Dioxide Film with A High-Quality Interface Using A Direct Neutral Beam Oxidation Process

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Method for preparing germanium-on-insulator (GeOI) substrate

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Investigation of GaAs Wafer Surface Blistering by Hydrogen Implantation

Ge-on-insulator fabrication based on Ge-on-nothing technology