Abstract:The point-contact high-purity germanium detector (HPGe) has the advantages of low background, low energy threshold, and high energy resolution and can be applied in the detection of rare-event physics. However, the performance of HPGe must be further improved to achieve superior energy resolution, low noise, and long-term reliability. In this study, we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge. The surface passivation effect is calculated and inferred from the band structure and density of interface states, and further confirmed by the minority carrier lifetime. The first-principles method based on the density functional theory was adopted to systematically study the lattice structure, band structure, and density of state (DOS) of four different systems: Ge–H, Ge–Ge-NH2, Ge-OH, and Ge-SiOx. The electronic characteristics of the Ge (100) unit cell with different passivation groups and Si/O atomic ratios were compared. This shows that H, N, and O atoms can effectively reduce the surface DOS of the Ge atoms. The passivation effect of the SiOx group varied with increasing O atoms and Si/O atomic ratios. Experimentally, SiO and SiO2 passivation films were fabricated by electron beam evaporation on a Ge substrate, and the valence state of Si and resistivity was measured to characterize the film. The minority carrier lifetime of Ge-SiO2 is 21.3 μs, which is approximately quadruple that of Ge-SiO. The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density. This study builds a relationship between the passivation effect and different termination groups, and provides technical support for the potential passivation layer, which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.

The Interfacial Defects Characteristic and Low-Temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge- Based Mos Device and High Purity Germanium Detectors

Analyzing the Surface Passivity Effect of Germanium Oxynitride: a Comprehensive Approach Through First Principles Simulation and Interface State Density

Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector

MOS Interface Engineering for High-Mobility Ge CMOS

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

The Study of the Passivation Technology for Bare HPGe Detector Working in LN2

Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and Nitrogen-Plasma-passivation

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Formation of Thin Germanium Dioxide Film with A High-Quality Interface Using A Direct Neutral Beam Oxidation Process

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Germanium Surface Passivation and Atomic Layer Deposition of High-K Dielectrics-A Tutorial Review on Ge-Based Mos Capacitors

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield