Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Method for preparing germanium-on-insulator (GeOI) substrate

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Formation of Thin Germanium Dioxide Film with A High-Quality Interface Using A Direct Neutral Beam Oxidation Process

The Study on Defects of Germanium-on-Insulator Fabricated by a Low Temperature Smart-Cut Process

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

Ge-on-insulator fabrication based on Ge-on-nothing technology

Ge CMOS Technology with Advanced Interface and Junction Engineering.

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process

Germanium doping for improved silicon substrates and devices

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Surface preparation and wet cleaning for Germanium surface