Abstract:With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique. The Ge buffer layer growth consists of low-temperature growth at 400 °C and high-temperature growth at 650 °C. The impact of the epitaxial quality of the Ge buffer on the defect density in the Si0.2Ge0.8/Ge stack has been studied. In this part, different thicknesses (0.6, 1.2 and 2.0 μm) of the Ge buffer on the quality of the Si0.2Ge0.8/Ge stack structure have been investigated. The thicker Ge buffer layer can improve surface roughness. A high-quality and atomically smooth surface with RMS 0.73 nm of the Si0.2Ge0.8/Ge stack structure can be successfully realized on the 1.2 μm Ge buffer layer. After the epitaxy step, the multilayer is vertically dry-etched to form a fin where the Ge channel is selectively released to SiGe by using wet-etching in HNO3 and H2O2 solution at room temperature. It has been found that the solution concentration has a great effect on the etch rate. The relative etching depth of Ge is linearly dependent on the etching time in H2O2 solution. The results of this study emphasize the selective etching of germanium and provide the experimental basis for the release of germanium channels in the future.

Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

Sub-10 Μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates Via a Wet Etching Method

Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method

Formation of Thin Germanium Dioxide Film with A High-Quality Interface Using A Direct Neutral Beam Oxidation Process

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Ultrathin Body Germanium-On-Insulator (geoi) Pseudo-Mosfets Fabricated by Transfer of Epitaxial Ge Films on Iii-V Substrates

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Surface preparation and wet cleaning for Germanium surface