Abstract:Introduction Ge is one of the most promising channel materials to further improve the performance of Si CMOS due to its high hole and electron mobility [1-3]. In order to overcome the current Si FinFET technology, 3D channel structure is mandatory for Ge MOSFETs. To fabricate Ge Fins, CF4- or SF6-based RIE etching is usually employed for Ge etching [Ref. needed]. However, both CF4 and SF6 RIE etching results in large surface roughness which strongly degrades the performance of Ge FinFETs. On the other hand, it is necessary to realize high selectivity of anisotropic etching of Ge which is important to obtain superior static electrical control of Fin channel. In this research, we developed a SF6-CF4 cyclic RIE etching method for Ge Fin formation with suppressed surface roughness. The impact of inserting SF6-O2 etching steps into CF4-O2 etching process on the surface roughness of Ge was systematically investigated, as well as the ratio of vertical etching to horizontal etching of Ge. It is found that with a time proportion of 60% for SF6-O2etching steps, a minimum RMS of 1.1 nm is obtained for Ge Fin etching. Experiments The CF4-O2 and SF6-O2 RIE cyclic etching were carried out for (100) Ge surfaces with the same pressure, plasma power and total gas flow. Different time proportions of 0%, 20%, 40%, 60%, 80% and 100%, were used for SF6-O2 etching steps during the CF4-O2etching, with a total etching time of each cycle for 20 s. The selectivity of vertical and horizontal etching of Ge was examined using SEM, and the surface roughness of Ge after etching was evaluated using AFM. Results and discussion Figure 1 shows the etching rate of CF4-O2 and SF6-O2 cyclic etching with different time proportion of SF6-O2 step. It is observed that the etching rate significantly increases with increase of SF6-O2 etching proportion, due to the high reactivity of SF6 with Ge [4]. The RMS of Ge surfaces after CF4-O2 and SF6-O2 cyclic etching for 20 s is evaluated by AFM (Figure 2). It is confirmed that large amount of surface roughness is generated for Ge surface after both CF4-O2 and SF6-O2 etching. With introducing SF6-O2 etching steps into CF4-O2 etching, the surface roughness of Ge is obviously reduced. The RMS values of Ge surface after CF4-O2 and SF6-O2 cyclic etching are summarized in Figure 3 as a function of the time proportion of SF6-O2 etching. It is found that with a time proportion of 60% for the SF6-O2 step, a minimum RMS of 1.1 nm is obtained for the Ge surface. The impact of SF6-O2 proportion to the ratio of vertical and horizontal etching for Ge is also examined, as shown in Figure 3. It is found that the selectivity of vertical etching decreases with increasing the SF6-O2 proportion. However, a relatively high selectivity of vertical etching of over 4 is still maintained with a time proportion of 60% for SF6-O2etching, resulting in Ge Fins with superior morphology (Figure 4). Conclusion A CF4-O2 and SF6-O2 cyclic etching method is proposed for Ge Fin formation. It is found that with a time proportion of 60% for SF6-O2etching step, superior morphology is achieved for Ge Fins with sufficiently suppressed surface roughness of 1.1 nm. References [1] S. Takagi, et al. IEDM, 2003. [2] H. Shang, et al. IBM. J. Res. Dev., 2006. [3] K. C. Saraswat, et al., Microelectro. Eng., 2008. [4] A. Campo, et al. J. Vac. Sci. Technol. B, 1995.

Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method

Sub-10 Μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates Via a Wet Etching Method

Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Reduction of RIE Induced Ge Surface Roughness by SF6-CF4 Cyclic Etching Method

Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Deposition of high-quality Ge film on Si by PECVD using GeCl4/H2 for fabricating near-infrared photodiodes

Thinning the Bulk into the Soft: Flexible and Stretchable Germanium Photodetectors

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

High-Quality Ge Films on Si Substrates Using Sb Surfactant-Mediated Graded Sige Buffers

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method