Abstract:For the integration of a reactive multilayer system (iRMS) with a high exothermic reaction enthalpy as a heat source on silicon wafers for low-temperature bonding in the 3D integration and packaging of microsystems, two main conflicting issues should be overcome: heat accumulation arising from the layer interface pre-intermixing, which causes spontaneous self-ignition during the deposition of the system layers, and conductive heat loss through the substrate, which leads to reaction propagation quenching. In this work, using electron beam evaporation, we investigated the growth of a high exothermic metallic Pd/Al reactive multilayer system (RMS) on different Si-wafer substrates with different thermal conduction, specifically a bare Si-wafer, a RuOx or PdOx layer buffering Si-wafer, and a SiO2-coated Si-wafer. With the exception of the bare silicon wafer, the RMS grown on all other coated wafers underwent systematic spontaneous self-ignition surging during the deposition process once it reached a thickness of around 1 μm. This issue was surmounted by investigating a solution based on tuning the output energy by stacking alternating sections of metallic reactive multilayer Pd/Al and Ni/Al systems that have a high and medium enthalpy of exothermic reactions, respectively. This heterostructure with a bilayer thickness of 100 nm was successfully grown on a SiO2-coated Si-wafer to a total thickness of 3 μm without any spontaneous upsurge of self-ignition; it could be electrically ignited at room temperature, enabling a self-sustained propagating exothermic reaction along the reactive patterned track without undergoing quenching. The results of this study will promote the growth of reactive multilayer systems by electron beam evaporation processing and their potential integration as local heat sources on Si-wafer substrates for bonding applications in microelectronics and microsystems technology.

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