Abstract:Recent research has shown that some intermetallic compound particles with high interfacial hydrogen trap energies (e.g., Mg 2 Si) are prone to damage at high hydrogen concentrations. In this study, the acceleration of particle damage in an A6061 alloy was observed in-situ via X-ray CT. The damage behavior of the particles that are located in the crack tip stress fi eld, where high stress triaxiality causes a local increase in the hydrogen concentration, was analyzed. The in fl uence of hydrogen on the damage behavior of the dispersed Mg 2 Si particles was investigated by preparing a material charged with hydrogen to achieve extremely high hydrogen concentration, and further hydrogen enrichment in a crack tip region was also utilized. Interfacial debonding of Mg 2 Si particles was frequently observed in the vicinity of a crack tip immediately prior to tensile fracture. Even though the fracture is typical of ductile fracture, hydrogen accelerates particle damage and reduces the macroscopic ductility of the aluminum alloy. This can be considered as a form of hydrogen embrittlement of aluminum alloys. Even in materials with relatively low hydrogen concentrations (0.85 mass ppm), interfacial debonding occurred in the hydrogen-enriched crack tip regions. A higher hydrogen concentration promoted interfacial debonding over a wider range of particle sizes and particle shapes. It can be inferred that localized hydrogen enrichment, which is expected to occur due to external hydrogen exposure, stress corrosion cracking, corrosion or crack tips, can directly contribute to debonding at the Mg 2 Si particle / aluminum matrix interface. According to the analysis, reduction of the diameter and simpli fi cation of the shape of Mg 2 Si particles are e ff ective method for suppressing such hydrogen-induced debonding. [doi:10.2320 / matertrans.MT-M2024026]

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO$_2$ interfaces

Studies of defect states in the interface between SiO2 and a-Si:H films

Electronically Induced Defect Creation at Semiconductor/oxide Interface Revealed by Time-Dependent Density Functional Theory

Interactions of atomic hydrogen with amorphous SiO 2

Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study

A Termination-Insensitive and Robust Electron Gas at the Heterointerface of Two Complex Oxides

Atomic and Electron Analyzing of Irradiation Damage in Si/SiO2 Interfaces Caused by Irradiation: First-principle Calculation

Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Effect of Hydrogen on the Integrity of Aluminium–oxide Interface at Elevated Temperatures

Effects of Hydrogen on Positive Charges in Gate Oxides

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO_2 interface

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

A First-Principles Investigation of Interfacial Properties and Electronic Structure of SiO2/Al Interface

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens

Effect of hydrogen on the local chemical bonding states and structure of amorphous alumina by atomistic and electrostatic modeling of Auger parameter shifts

The effects of hydrogen on the bonding properties of SiC/Cu interface via first-principles calculations

Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface

Hydrogen Induced Positive Charge Generation in Gate Oxides

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

Hydrogen Induced Debonding of Mg<sub>2</sub>Si Particle / Aluminum Interface in Al-Mg-Si Alloy