Abstract:The impact of hydrogen charge states on the stability and transport characteristics of hydrogen interstitials in alumina polymorphs is evaluated by multiscale computational methods including density functional theory (DFT), ab initio molecular dynamics (AIMD) and machine learned force fields. Thermodynamic calculations show that the protonic H i +1 interstitial is the most stable defect species for most values of the electronic bandgap in both α and amorphous alumina (Al 2 O 3 ). Further, active learned Gaussian approximation potentials (GAP) were developed using AIMD data to study temperature dependent long time proton diffusion in alumina. Diffusivity calculations from GAP-MD simulations are found to be comparable with of the AIMD data, while being ∼340 times faster and scalable to larger systems. Comparisons with diffusivity values for other interstitial charge states (H i 0 and H i −1 ) and published experimental literature indicate that H i +1 diffusion is the likely mechanism of hydrogen transport. A good agreement is obtained between H i +1 diffusivity calculated in α -Al 2 O 3 from DFT: 5.05 × 10 −3 exp(-0.81 eV/k B /T) cm 2 /s and reported experiment: 9.7 ×10 −4 exp(-0.83 eV/k B /T) cm 2 /s. Computationally and experimentally calculated energy barriers (0.81 and 0.83 eV respectively) only differ by 2.5%. Similarly, the pre-exponential diffusion coefficients only differ by 0.5 orders of magnitude. Moreover, the diffusivity of H i +1 in amorphous Al 2 O 3 in the 1000–2000 K range is calculated to be 2.53 × 10 −2 exp(-0.89 eV/k B /T), just one order of magnitude higher than the corresponding value in α -Al 2 O 3 . This suggests that local structural disorder does not significantly affect the energy landscape and diffusion behavior of H i +1 in Al 2 O 3 . Overall, these results show promise for the application of alumina polymorphs as hydrogen permeation barriers.

Interactions of hydrogen with amorphous hafnium oxide

Thermal Transport Mechanism of Amorphous HfO 2 : A Molecular Dynamics Based Study

Interactions of atomic hydrogen with amorphous SiO 2

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

High temperature stability and transport characteristics of hydrogen in alumina via multiscale computation

Effect of hydrogen on the local chemical bonding states and structure of amorphous alumina by atomistic and electrostatic modeling of Auger parameter shifts

Theoretical investigation on hydrogen-related oxide traps in HfO2 gate dielectrics: An ab-initio study

A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters

Amphoteric behavior of hydrogen (H+1and H-1) in complex hydrides from van der Waals interaction included ab-initio calculation

First-principles study of structural, vibrational and lattice dielectric properties of hafnium oxide

First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

Thermal Transport Mechanism of Amorphous HfO2: A Molecular Dynamics Based Study

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Percolation conductivity in hafnium sub-oxides

Effects of Hydrogen on Positive Charges in Gate Oxides

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al2O3 films grown by thermal atomic layer deposition

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO$_2$ interfaces

Defect State Density and Orbital Localization in a-Si:H/c-Si Heterojunction and the Role of H

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications