Abstract:We report self-consistent calculations for the electronic structure of four complex defects, namely the monohydrogen-vacancy (VH), dihydrogen-vacancy (VH2), trihydrogen-vacancy (VH3), and quadrihydrogen-vacanCY (VH4) complexes, in crystalline silicon. The calculations are based on a semiempirical tight-binding theory. Each of the defects is described by a large repeated supercell. To overcome the difficulties in the treatment of large Hamiltonian matrices, we use the recursion method for computing the local densities of states and the localization of the defect states. We have also calculated numerically the wave functions of the fundamental gap states, which are, in turn, used to derive the hyperfine interaction parameters arising from the paramagnetic spin of the wave functions of the gap states for the complex defects. We have found that, in the VH4 defect, the electrical activity is passivated by four hydrogen atoms, in agreement with early theoretical studies. For the defects VH, VH2, and VH3, we have found that the electrical activity is only partially passivated. We show that the nonhydrogenated silicon dangling orbitals are responsible for the remaining electrical activity. We also demonstrate that the Si-H bonding and antibonding states interact very weakly with the silicon dangling-bond states. Models accounting for the electronic structure of the four defects are presented. The effects of the symmetry-conserved distortions and the Jahn-Teller distortions on the electronic structure of the defects are examined. The calculations have been done in detail for the experimentally well-studied VH2 defect. The results of these calculations agree well with recent experimental studies on this defect.

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Studies of defect states in the interface between SiO2 and a-Si:H films

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Distribution and electronic structure of interstitial hydrogen atoms in β-SiC: a First-Principles study

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens

Bonding properties of amorphous silicon and quantum confinement in the mixed phases of silicon nano slabs

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Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Theoretical study of hydrogenated 3C–SiC(001)-(2×1) surface

Analysis of single and composite structural defects in pure amorphous silicon: A first-principles study

Study of hafnium defects in silicon dioxide using density functional theory

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

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