Abstract:Smart-Cut(R) is a recently established, advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has found many other successful applications. It meets almost all the high requirements for processing and manufacturing SOI wafers, which provide the basis of ultra-large-scale integration device structures of modern microelectronic industry. In the present paper, we present a fundamental study on the basic mechanisms in the Smart-Cut technology from the viewpoints of mechanics and physics. First, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. This model is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology. An analytical formulation is derived to calculate the defect density as a function of the H-implantation dose and the temperature. Then, the splitting of SOI wafers in the Smart-Cut technology is analyzed using the elastic fracture mechanics theory. Accounting for the embrittlement and diffusion effects of hydrogen, a lower bound of the implantation dose of hydrogen ions is derived, which agrees reasonably with experimental observations. Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process. It is found that the handle wafer leads to uniform crack propagation and higher uniformity in the thickness of the final SOI systems, in comparison with conventional techniques to produce SOI substrates, and prohibits the blistering and flaking failure of an H-implanted wafer. This work provides not only a fundamental understanding to the physical mechanisms associated with the Smart-Cut technology but also a useful reference for determining the process parameters of SOI industrial production. (C) 2004 Elsevier Ltd. All rights reserved.

Defect nucleation in SOI wafers due to hydrogen ion implantation

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Molecular Dynamics Study on Splitting of Hydrogen-Implanted Silicon in Smart-Cut® Technology

Studies of defect states in the interface between SiO2 and a-Si:H films

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Evolution of secondary defects in arsenic implanted Si

Mechanics Of Smart-Cut((R)) Technology

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

Fracture Mechanics Analysis on Smart-Cut ® Technology. Part 1: Effects of Stiffening Wafer and Defect Interaction

Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Mechanism behind the Crack Formation in Hydrogen Doping Cz-Si Crystal Growth

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Irradiation Defects in Silicon Crystal

3D Simulation of the Defect Generation by Hydrogen at $Si-Sio_2$ Interface

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Defect State Density and Orbital Localization in a-Si:H/c-Si Heterojunction and the Role of H

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution