Abstract:Smart-Cut(R) is a recently established, advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has found many other successful applications. It meets almost all the high requirements for processing and manufacturing SOI wafers, which provide the basis of ultra-large-scale integration device structures of modern microelectronic industry. In the present paper, we present a fundamental study on the basic mechanisms in the Smart-Cut technology from the viewpoints of mechanics and physics. First, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon. This model is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology. An analytical formulation is derived to calculate the defect density as a function of the H-implantation dose and the temperature. Then, the splitting of SOI wafers in the Smart-Cut technology is analyzed using the elastic fracture mechanics theory. Accounting for the embrittlement and diffusion effects of hydrogen, a lower bound of the implantation dose of hydrogen ions is derived, which agrees reasonably with experimental observations. Furthermore, the effects of the handle wafer adopted in the Smart-Cut technique are examined on the splitting process. It is found that the handle wafer leads to uniform crack propagation and higher uniformity in the thickness of the final SOI systems, in comparison with conventional techniques to produce SOI substrates, and prohibits the blistering and flaking failure of an H-implanted wafer. This work provides not only a fundamental understanding to the physical mechanisms associated with the Smart-Cut technology but also a useful reference for determining the process parameters of SOI industrial production. (C) 2004 Elsevier Ltd. All rights reserved.

Mechanics Of Smart-Cut((R)) Technology

Fracture Mechanics Analysis on Smart-Cut ® Technology. Part 1: Effects of Stiffening Wafer and Defect Interaction

Molecular Dynamics Study on Splitting of Hydrogen-Implanted Silicon in Smart-Cut® Technology

Fracture Mechanics Analysis On Smart-Cut(A (R)) Technology. Part 2: Effect Of Bonding Flaws

SOI Wafer Achieved by Smart-Cut Process

Defect nucleation in SOI wafers due to hydrogen ion implantation

SO1 WAFER ACHIEVED BY §MART-CUT PROCESS

Fracture Mechanics Analysis of Three-Dimensional Ion Cut Technology

The Evolution of H+ Implantation Induced Defects and the Different Cleavage Behaviors under Different Thermal Excitation in 4H-Sic During Crystal-Ion-Slicing Technology

Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

A new SOI technology: smart-cut

Fracture Mechanics Analysis of the Effects of Temperature and Material Mismatch on the Smart-Cut® Technology

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Finite element simulation and experimental research on microcutting mechanism of single crystal silicon

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

Research of Mechanism of Buried Oxide Layer Stress Impact on the Micro-cantilever Processing Breakage

The separation mechanism of 4H-SiC dicing by continuous laser

Improvement mechanism of brittle-plastic transition and residual stress in scratching 4H-SiC implanted by hydrogen ions

Analysis of the high-efficiency and low-damage abrasive processing mechanism for SiC based on the SPH simulation of single-grain indentation and scratching