Abstract:The surface modification by ultra-fast laser could regulate the mechanical properties of hard and brittle materials. Since silicon carbide (SiC) is too hard to be machined with acceptable removal rate and quality by mechanical abrasives, and femtosecond laser (fs-laser) assisted grinding could be a potential method to improve the machinability of SiC. Under fs-laser modulating, SiC surface could be modified to generate laser-induced periodic surface structures (LIPSS). Understanding the mechanical properties and material removal mechanism of the LIPPS surface is crucial to accomplish a high efficiency and quality machining process. This paper aims to investigate the effects of fs-laser modification on the mechanical properties, removal mechanism, removal efficiency, and microstructure changes of 4H-SiC surface during removal, together with those of the original 4H-SiC surface for comparison. The hardness and elastic recovery ability of the modified layer are determined by nanoindentation test, and the nano-scratch test is adopted to study the materials removal behavior. The removal efficiency and the quality of the modified surface is significantly improved. Phase transformation is observed in the scratching area, which reveals the existence of ductile mode removal. Moreover, the stress distribution and the change of scratching force on the surface of SiC before and after modification are studied by finite element method (FEM). The results show that the stress distribution and transmission when scratched on the modified surface is lower than that of the original surface, and the scratching force under the same scratch conditions is greatly reduced. With the understanding of materials removal behavior from the whole process of deformation, phase transformation, and separation of LIPPS from substrate, then the fs-laser modification of SiC could be evidenced as an effective method to improve the grinding efficiency and quality in mass production of industry.

The separation mechanism of 4H-SiC dicing by continuous laser

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

Stealth Dicing of SiC Using Femtosecond Laser Bessel Beam

CW laser-assisted splitting of SiC wafer based on modified layer by picosecond laser

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Materials removal mechanism of single crystalline SiC with laser-induced periodic surface structures (LIPSS)

Crystal Cleavage, Periodic Nanostructure And Surface Modification Of Sic Ablated By Femtosecond Laser In Different Media

Research on the formation and evolution mechanism of cracks in laser stealth dicing of silicon carbide crystals

Investigation on the crack fracture mode and edge quality in laser dicing of glass-anisotropic silicon double-layer wafer

Laser cutting sandwich structure glass–silicon–glass wafer with laser induced thermal–crack propagation

Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

The ablation behavior and modification mechanism of SiC under different laser energy

Curve Cutting ZrO<sub>2</sub> Ceramic and Cooling Lower Surface Cutting Silicon Wafer with Laser Induced Thermal-Crack Propagation

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Mechanism and Regulation of Thermal Damage on Picosecond Laser Modification Dicing of SiC Wafer

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing