Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Multi-focal Picosecond laser vertical slicing of 6 inch 4H-SiC ingot

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Process mechanism of ultrafast laser multi-focal-scribing for ultrafine and efficient stealth dicing of SiC wafers

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Stealth Dicing of SiC Using Femtosecond Laser Bessel Beam

4H-SiC wafer slicing by using femtosecond laser double-pulses

Good-Quality and High-Efficiency Dicing for Thick LiNbO3 Wafers Using Picosecond Laser Pulses

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

CW laser-assisted splitting of SiC wafer based on modified layer by picosecond laser

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

Modulation of Ultrafast Laser-Induced Modified Structure Inside Silicon Carbide for Thin Wafer Dicing

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

355Nm DPSS UV Laser Micromachining of Single-Crystal Silicon

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Laser Ablation of 6H-Sic Single Crystals and Spectral Characterization

Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer

The separation mechanism of 4H-SiC dicing by continuous laser

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser