Abstract:High-quality, low-defect laser machining of dielectric materials remains challenging due to the high energy densities required for inducing the physical processes of laser ablation. Therefore, experiments were performed to demonstrate the laser-induced frontside etching (LIFE) of silicon by nanosecond laser pulses at a wavelength of 1550 nm, utilizing a thin chromium layer as the absorber. Etching was found at a fluence range from 200 to 700 mJ/cm(2), where the etched surfaces were smooth in the center (5 to 80 nm rms). The etching process was accompanied by incubation as well as saturation effects. At a fluence of 280 mJ/cm(2), an averaged etching rate of about 0.05 nm/pulse was determined for a high number of laser pulses (N> 1000). At the edges where the fluence was below the etching threshold of about 200 mJ/cm(2), chromium film melting and the formation of different kinds of laser-induced periodic surface structures (LIPSS) were observed. The LIFE was accompanied by different surface modifications. The optical absorption of silicon likely increased due to the incorporation of chromium into the silicon and the formed defects near the surface. Further, LIPSS were observed at fluences near the threshold of laser etching. In particular, the formation of regular linear ripples with a period of approximately 1.52 mu m was observed. The morphological characteristics of the ripples suggest that the mechanism was related to surface scattering at surface features or small ripples and the hydrodynamic instabilities of the molten silicon. In addition, outside the etching track, periodic but nonlinear LIPSS were observed in the chromium film. These hexagonal arranged dot-like patterns had a period of around 440 nm. It is suggested that the hexagonal dot-like patterns resulted from the multi-pulse irradiation and the sequential stress relaxation in the chromium film below the melting point of chromium during spot movement.

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Silicon Laser Micro-Processing of New Energy Source Materials

355Nm DPSS UV Laser Micro-Processing for the Semiconductor and Electronics Industry

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Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

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One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Micromachining technology of sapphire substrate based on 157nm DUV laser

Laser-induced Frontside Etching of Silicon Using 1550-Nm Nanosecond Laser Pulses

Femtosecond laser micromachining of SiC ceramic structures

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

Study of Nanosecond Pulse Laser Micro-Fabrication

Study of Excimer Laser Electrochemical Etching Silicon

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Recent Development of Low Damage Laser Microprocessing on Surface and Subsurface Treatment of Silicon for Industrial Applications

Laser micro-structuring of sapphire wafer and fiber

Modeling and optimizing of laser-assisted waterjet process parameters for near-damage-free micromachining of monocrystalline silicon

Improved Machinability of Single Crystal Silicon by Applying In-Situ Laser-Vibration Hybrid Assisted Diamond Cutting

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Large-area femtosecond laser milling of silicon employing trench analysis