Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Modulation of Ultrafast Laser-Induced Modified Structure Inside Silicon Carbide for Thin Wafer Dicing

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

Good-Quality and High-Efficiency Dicing for Thick LiNbO3 Wafers Using Picosecond Laser Pulses

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

CW laser-assisted splitting of SiC wafer based on modified layer by picosecond laser

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

Multi-focal Picosecond laser vertical slicing of 6 inch 4H-SiC ingot

Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography

Mechanism and morphology control of underwater femtosecond laser microgrooving of silicon carbide ceramics.

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Femtosecond laser surface modification of 4H-SiC improves machinability

High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser