Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

The separation mechanism of 4H-SiC dicing by continuous laser

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

CW laser-assisted splitting of SiC wafer based on modified layer by picosecond laser

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation

The ablation behavior and modification mechanism of SiC under different laser energy

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Microstructure evolution and ablation mechanism of SiCf/SiC ceramic matrix composite microgrooves processed by pico-second laser

Research on the formation and evolution mechanism of cracks in laser stealth dicing of silicon carbide crystals

Multi-Physics Coupling Simulation of Picosecond Pulsed Laser Ablation of Single-Crystal Silicon

Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide

Laser ablation behavior and mechanism of Cf/C–SiC composites under different laser energy densities

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Single diamond scribing of SiCf/SiC composite: Force and material removal mechanism study

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Modeling of excimer laser ablation of silicon carbide

Study on the Grooved Morphology of CMC-SiCf/SiC by Dual-Beam Coupling Nanosecond Laser

Laser cutting sandwich structure glass–silicon–glass wafer with laser induced thermal–crack propagation