Abstract:Silicon carbide (SiC) is promising in semiconductor devices operating in extreme environments owing to its excellent properties including wide forbidden band, high thermal conductivity, thermal stability, chemical inertness, and high saturation rate. However, its Mohs hardness of 9 poses challenges for conventional machining techniques. Femtosecond laser processing offers an effective alternative for SiC processing, yet the underlying mechanism of interaction between laser pulse and SiC remains unclear. Herein we studied the mechanism of laser interacted with SiC, thoroughly investigated the structural transformation and morphology change of single crystal 6H-SiC induced by single ultrafast laser pulse irradiation at different pulse energies. The morphology changes of single pulse induced crater, i.e., diameter and depth, are characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The structural transformation and changes in the chemical composition are analyzed using micro-Raman spectroscopy. Moreover, the evolution of lattice arrangement is revealed by high-resolution transmission electron microscopy (TEM). At low pulse energies just above the modification threshold, the sample surface undergoes moderate modification, no larger craters and amorphous silicon are produced. At even higher energies, nonlinear absorption and ionization occur under ultrafast laser irradiation, the energy of the hot free electrons is transferred to the cold crystal lattice through electron–phonon scattering, causing a sharp increase in the lattice temperature. Si-C crystal bonds are broken and melting, resolidification and the generation of amorphous and crystalline silicon phase appeared.

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

Crack Healing Behavior of 4H-Sic: Effect of Dopants

Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

Nano material removal mechanism of 4H-SiC in ion implantation-assisted machining

Deformation of 4H-SiC: The role of dopants

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Micromechanical properties characterization of 4H–SiC single crystal by indentation and scratch methods

Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Atomic study on deformation behavior and anisotropy effect of 4C–SiC during nanoindentation

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Investigation of the Material Removal Process in In-Situ Laser-Assisted Diamond Cutting of Reaction-Bonded Silicon Carbide

Influence of Applied Tensile/Compressive Stress on He-Irradiated SiC: Examining Defect Evolution Through Experimental Investigation and DFT Simulations

Investigation of the Morphology and Structural Transformation of 6H-Sic Induced by a Single Femtosecond Laser Pulse

A Study of Deformation Behavior and Phase Transformation in 4H-Sic During Nanoindentation Process Via Molecular Dynamics Simulation

Improvement mechanism of brittle-plastic transition and residual stress in scratching 4H-SiC implanted by hydrogen ions

MD Simulation of Stress-Assisted Nanometric Cutting Mechanism of 3C Silicon Carbide