Abstract:Mechanical dicing is a critical step in producing electronic chips and devices. Single crystal silicon carbide (SiC) is a vital wafer material in modern electronic chips because of its exceptional physical properties, such as wide bandgap and high breakdown voltage. However, the high hardness of SiC makes it extremely challenging to achieve the dicing quality required for the reliable functioning of electronic chips. The removal characteristics of single crystal SiC in mechanical dicing process remains largely unclear. This work aims to systematically investigate the influences of diamond abrasives in ultrathin blades on the dicing force, chipping size, surface roughness, and material removal of single crystal SiC in mechanical dicing. Experimental results indicate the diamond abrasives considerably affect the chipping formation and the material removal of SiC workpieces by changing the undeformed chip thickness. Theoretical analysis based on the classic brittle-ductile transition model reveals that single crystal SiC can be removed in a ductile-like mode using relatively large abrasive size and low concentration, as long as the undeformed chip thickness is sufficiently smaller than the calculated critical depth of cutting. In addition, the mounting method of single crystal SiC workpieces and the wear characteristics of diamond blades play a crucial role in the removal behaviours and, therefore, the dicing quality. An example was given to demonstrate the feasibility of simultaneously improving the dicing quality and the removal rate via appropriately increasing concentration and reducing sizes of abrasives in ultrathin blades. Ultimately, the findings in this research provide a guideline for further optimization of the dicing tools and parameters for other hard-and-brittle solids.

The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Influence of diamond abrasives on material removal of single crystal SiC in mechanical dicing

High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

Optimizing the dicing saw parameters of 60 μm wafer dicing street

Influence of sintering temperature on dicing performances of metal-bonded diamond blades on sapphire

Experimental Analysis of Ductile Cutting Regime in Face Milling of Sintered Silicon Carbide

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Experiment study on electroplated diamond wire saw slicing single-crystal silicon

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Material Removal Mechanisms of Polycrystalline Silicon Carbide Ceramic Cut by a Diamond Wire Saw

Single diamond scribing of SiCf/SiC composite: Force and material removal mechanism study

Preparation and characterization of ultra-thin dicing blades with different bonding properties

Investigation on the Edge Chipping in Ultrasonic Assisted Sawing of Monocrystalline Silicon

Edge chipping characteristics in grinding SiCf/SiC composite

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation

A hybrid process technology of SiC die separation

Analysis of the high-efficiency and low-damage abrasive processing mechanism for SiC based on the SPH simulation of single-grain indentation and scratching

Fabrication of silicon carbide microchannels by thin diamond wheel grinding

Simulation and experimental study on limited cutting and heat effect of silicon carbide