Abstract:The surface modification by ultra-fast laser could regulate the mechanical properties of hard and brittle materials. Since silicon carbide (SiC) is too hard to be machined with acceptable removal rate and quality by mechanical abrasives, and femtosecond laser (fs-laser) assisted grinding could be a potential method to improve the machinability of SiC. Under fs-laser modulating, SiC surface could be modified to generate laser-induced periodic surface structures (LIPSS). Understanding the mechanical properties and material removal mechanism of the LIPPS surface is crucial to accomplish a high efficiency and quality machining process. This paper aims to investigate the effects of fs-laser modification on the mechanical properties, removal mechanism, removal efficiency, and microstructure changes of 4H-SiC surface during removal, together with those of the original 4H-SiC surface for comparison. The hardness and elastic recovery ability of the modified layer are determined by nanoindentation test, and the nano-scratch test is adopted to study the materials removal behavior. The removal efficiency and the quality of the modified surface is significantly improved. Phase transformation is observed in the scratching area, which reveals the existence of ductile mode removal. Moreover, the stress distribution and the change of scratching force on the surface of SiC before and after modification are studied by finite element method (FEM). The results show that the stress distribution and transmission when scratched on the modified surface is lower than that of the original surface, and the scratching force under the same scratch conditions is greatly reduced. With the understanding of materials removal behavior from the whole process of deformation, phase transformation, and separation of LIPPS from substrate, then the fs-laser modification of SiC could be evidenced as an effective method to improve the grinding efficiency and quality in mass production of industry.

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Stealth Dicing of SiC Using Femtosecond Laser Bessel Beam

Process mechanism of ultrafast laser multi-focal-scribing for ultrafine and efficient stealth dicing of SiC wafers

Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Interface failure behavior and mechanisms of 4H-SiC wafer with alloy backside layer caused by different dicing technologies

4H-SiC wafer slicing by using femtosecond laser double-pulses

A hybrid process technology of SiC die separation

The separation mechanism of 4H-SiC dicing by continuous laser

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Modulation of Ultrafast Laser-Induced Modified Structure Inside Silicon Carbide for Thin Wafer Dicing

Materials removal mechanism of single crystalline SiC with laser-induced periodic surface structures (LIPSS)

High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

Mechanism and Regulation of Thermal Damage on Picosecond Laser Modification Dicing of SiC Wafer

Simulation study on physical features of a silicon substrate during stealth dicing with a constrained interpolation profile procedure