Abstract:As stacking technologies, such as 2.5D and 3D packages, continue to accelerate in advanced semiconductor components, the singulation and thinning of Si wafers are becoming increasingly critical. Despite their importance in producing thinner and more reliable Si chips, achieving high reliability remains a challenge, and comprehensive research on the effects of these processing techniques on Si chip integrity is lacking. In this study, the impacts of wafer thinning and singulation on the fracture strength of Si wafers were systematically compared. Three different grinding processes, namely fine grinding, poly-grinding, and polishing, were used for thinning, and the resulting surface morphology and roughness were analyzed using scanning electron microscopy and an interferometer. In addition, the residual mechanical stress on the wafer surface was measured using Raman spectroscopy. The fracture strength of Si wafers and chips was assessed through three-point bending tests. Singulation, including blade dicing, laser dicing, and stealth dicing, was evaluated for its impact on fracture strength. Among these processes, polishing for wafer thinning exhibited the lowest full-width half maximum and intensity ratio of Raman shifts (I480/I520), indicating minimal residual stress and surface defects. Consequently, Si wafers and chips processed through polishing demonstrated the highest fracture strength. Moreover, the 60 μm thick Si wafers and chips showed the highest fracture strength compared with those with thicknesses of 90 and 120 μm, possibly because of the increased flexibility, which mitigates stress. Among the singulation methods, stealth dicing yielded the highest fracture strength, outperforming blade and laser dicing. The combination of wafer thinning via polishing and singulation via stealth dicing presents an optimal solution for producing highly reliable Si chips for 2.5D and 3D packaging. These findings may be valuable in selecting optimal processing technologies for high-reliability Si chip production in industrial settings.

Interface failure behavior and mechanisms of 4H-SiC wafer with alloy backside layer caused by different dicing technologies

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

The separation mechanism of 4H-SiC dicing by continuous laser

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Influence of diamond abrasives on material removal of single crystal SiC in mechanical dicing

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Si Characterization on Thinning and Singulation Processes for 2.5/3D HBM Package Integration

The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

A hybrid process technology of SiC die separation

Fabrication of 4H–SiC microvias using a femtosecond laser assisted by a protective layer

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation

The chip generation and removal mechanisms of thermal-assisted polishing monocrystalline 4 H-SiC