Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

4H-SiC wafer slicing by using femtosecond laser double-pulses

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Multi-focal Picosecond laser vertical slicing of 6 inch 4H-SiC ingot

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Experimental study on femtosecond laser ablation of 4H-SiC substrate

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

One-step fabrication of fine surfaces via femtosecond laser on sliced SiC

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

High speed and low roughness micromachining of silicon carbide by plasma etching aided femtosecond laser processing

Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Femtosecond laser two-beam interference applied to 4H-SiC surface hierarchical micro-nano structure fabrication

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond-pulsed laser micromachining of a 4H–SiC wafer for MEMS pressure sensor diaphragms and via holes