Abstract:The continuous decrease in feature size in the production of electronic chips has two major consequences for silicon wafers: (i) processing conditions for slicing and grinding operations need to be optimized and (ii) surface damage imposed by wafer handling and transport needs to be minimized. Cultivating a deeper understanding of the subsurface implications of contact, in particular during scratching, is necessary to achieve these goals. The active subsurface micro-deformation mechanisms, including phase transformations and crack formation, can only be measured post-scratch. On the other hand, numerical models are free of experimental constraints and can therefore serve an instrumental role in uncovering the active deformation mechanisms during scratching. However, model identification and validation with experimental data is essential for reliable simulation results. Therefore, in this paper, a numerical scratch model consisting of a continuum particle methodology combined with a large strain inelastic constitutive model is exploited, whereby the parameters are identified from indentation data. The numerical-experimental results are next compared for a range of micro-scratch tests. The experimental micro-scratch device was mounted inside a scanning electron microscope to perform in situ scratch experiments. The real-time observations at the scratched surface allowed to assess and exclude possible experimental artifacts. The simulations demonstrate the ability to investigate the evolution of the phase transformations underneath the scratched surface and relate this to the hydrostatic pressure. Notably, at the simulated subsurface phase boundary, hydrostatic tension was found which is expected to play an important role in median crack formation, as often reported in the literature. For the simulation and experiments, the steady state segments are compared and it was found that the model accurately reproduces the substantial surface recovery due to the Si-II → Si-a phase transformation. Additionally, the simulated and experimental surface cross-sectional profiles for normal scratching loads of 30, 40 and 50 mN are in adequate agreement.

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

Influence of Anisotropy on Material Removal and Deformation Mechanism Based on Nanoscratch Tests of Monocrystal Silicon

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Strain rate effect on material deformation and removal behavior during high speed scratching of 4H‐SiC

Effect of grinding damage on cutting force and ductile machining during single grain scratching of monocrystalline silicon

Atomistic understanding of the subsurface damage mechanism of silicon (100) during the secondary nano-scratching processing

Study on Subsurface Damage of Wafer Silicon Containing Through Silicon Via in Thinning

Coupled SPH-FEM modeling of Berkovich indenter scratching of single-crystal silicon

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Analysis of the high-efficiency and low-damage abrasive processing mechanism for SiC based on the SPH simulation of single-grain indentation and scratching

Effects of grinding speeds on the subsurface damage of single crystal silicon based on molecular dynamics simulations

Numerical and experimental investigation on ductile deformation and subsurface defects of monocrystalline silicon during nano-scratching

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

Experimental-numerical analysis of silicon micro-scratching

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Cutting Performance of Single Crystal Silicon Anisotropic Surface in Micro-nano Scale

Experimental Study on the Surface Cutting Mechanical Properties of Single Crystal Silicon in Micro-Nano Scale

Study on the Vertical Ultrasonic Vibration-Assisted Nanomachining Process on Single-Crystal Silicon

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Study of Prefabricated Crack Propagation on Monocrystalline Silicon Surfaces for Grinding Damage Analysis