Abstract:The continuous decrease in feature size in the production of electronic chips has two major consequences for silicon wafers: (i) processing conditions for slicing and grinding operations need to be optimized and (ii) surface damage imposed by wafer handling and transport needs to be minimized. Cultivating a deeper understanding of the subsurface implications of contact, in particular during scratching, is necessary to achieve these goals. The active subsurface micro-deformation mechanisms, including phase transformations and crack formation, can only be measured post-scratch. On the other hand, numerical models are free of experimental constraints and can therefore serve an instrumental role in uncovering the active deformation mechanisms during scratching. However, model identification and validation with experimental data is essential for reliable simulation results. Therefore, in this paper, a numerical scratch model consisting of a continuum particle methodology combined with a large strain inelastic constitutive model is exploited, whereby the parameters are identified from indentation data. The numerical-experimental results are next compared for a range of micro-scratch tests. The experimental micro-scratch device was mounted inside a scanning electron microscope to perform in situ scratch experiments. The real-time observations at the scratched surface allowed to assess and exclude possible experimental artifacts. The simulations demonstrate the ability to investigate the evolution of the phase transformations underneath the scratched surface and relate this to the hydrostatic pressure. Notably, at the simulated subsurface phase boundary, hydrostatic tension was found which is expected to play an important role in median crack formation, as often reported in the literature. For the simulation and experiments, the steady state segments are compared and it was found that the model accurately reproduces the substantial surface recovery due to the Si-II → Si-a phase transformation. Additionally, the simulated and experimental surface cross-sectional profiles for normal scratching loads of 30, 40 and 50 mN are in adequate agreement.

Coupled SPH-FEM modeling of Berkovich indenter scratching of single-crystal silicon

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Molecular Dynamics Simulation of Single-Crystal 4H-SiC Nano Scratching with Different Scratching Directions of the Tool

Experimental-numerical analysis of silicon micro-scratching

Microscopic Stress Analysis of Nanoscratch Induced Sub-Surface Defects in a Single-Crystal Silicon Wafer

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

Study on the Machined Depth when Nanoscratching on 6H-Sic Using Berkovich Indenter: Modelling and Experimental Study

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Numerical and experimental investigation on ductile deformation and subsurface defects of monocrystalline silicon during nano-scratching

Fundamental Investigation on Damage Evolution and Material Removal Mechanism in Scratching Anisotropic Brittle Material

Molecular dynamics simulation of AFM scratching on silicon with varying load

Atomistic understanding of the subsurface damage mechanism of silicon (100) during the secondary nano-scratching processing

Molecular simulation of ultrasonic assisted diamond grit scratching 4H-SiC single-crystal

Influence of Anisotropy on Material Removal and Deformation Mechanism Based on Nanoscratch Tests of Monocrystal Silicon

Surface Damage Mechanism of Monocrystalline Si under Mechanical Loading

Material removal behavior analysis of ZnSe crystal during side-forward nanoscratching

Material removal and damage formation mechanisms induced by periodic indentation during ultrasonic vibration-assisted scratching of SiC f /SiC composites

Effect of grinding damage on cutting force and ductile machining during single grain scratching of monocrystalline silicon

Theoretical modeling and experimental analysis of single-grain scratching mechanism of fused quartz glass

Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter

Molecular Dynamics Simulation of the Combination Effect of the Tip Inclination and Scratching Direction on Nanomachining of Single Crystal Silicon