Abstract:4H-SiC (silicon carbide) is widely used in semiconductor devices due to its superior characteristics. However, processing techniques such as cutting, grinding, and polishing generally have problems such as low processing efficiency, high cost, difficulties guaranteeing processing quality, and serious material waste. The in-depth research on the mechanical behavior, material removal, and damage mechanism of SiC single crystals at the micro/nano scale is the foundation for solving these problems. This paper establishes a molecular dynamics simulation model for 4H-SiC single-crystal nano scratches, using three different directions of a Berkovich indenter to scratch the surface of the workpiece, studying the surface morphology, scratching force, and material removal during the scratching process. The results indicate that scratching directions of the tool varies, and the surface morphology also varies. After the scratching depth exceeds 1.6 nm, complete dislocations with a Burges vector of 1/3 appear on the crystal subsurface, leading to the plastic removal of the material. During the process of material removal, a smaller tool rake angle removes a larger amount of material chips. By analyzing the damage layer of the workpiece, the difference in the damage layer is smaller when the scratching direction is different, but the damage layer generated by the smaller rake angle of the scratching tool is thinner. It shows that the scratching force and workpiece temperature are relatively small when the rake angle of the scratching tool is small. Therefore, when scratching 4H-SiC single crystals, choosing a tool with a smaller rake angle is more beneficial for the process.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to study the mechanical behavior, material removal and damage mechanisms of single - crystal 4H - SiC nano - scratches under different tool scratch directions through molecular dynamics simulations. Specifically, the paper focuses on the following aspects: 1. **Changes in surface topography**: Study the changes in the surface topography of single - crystal 4H - SiC under different scratch directions. 2. **Changes in scratch force**: Analyze the influence of different scratch directions on the scratch force. 3. **Material removal mechanism**: Explore the material removal mechanisms under different scratch directions, especially the plastic removal of materials during the scratching process. 4. **Differences in damage layers**: Study the differences in the workpiece damage layers under different scratch directions and the influence of different tool rake angles on the damage layer thickness. ### Background and motivation 4H - SiC (silicon carbide) is widely used in semiconductor devices due to its excellent properties. However, traditional processing techniques such as cutting, grinding and polishing usually have problems such as low processing efficiency, high cost, difficulty in ensuring processing quality and serious material waste. In - depth study of the mechanical behavior, material removal and damage mechanisms of single - crystal 4H - SiC at the micro / nano scale is of fundamental significance for solving these problems. ### Research methods The paper established a molecular dynamics simulation model of single - crystal 4H - SiC nano - scratches. The Berkovich indenter was used to scratch the workpiece surface in three different directions to study the surface topography, scratch force and material removal during the scratching process. The main steps include: 1. **Establishing a simulation model**: The model consists of a scratch tool and a single - crystal 4H - SiC sample. The tool is a Berkovich indenter with a tip radius of 20 nm, which is regarded as a rigid body without considering its deformation and wear. 2. **Loading and unloading processes**: The tool obliquely scratches into the surface of the 4H - SiC sample at a constant speed. The speed in the X - direction is - 100 m/s, and the speed in the Z - direction is - 12 m/s. After running 260,000 steps, the tool moves upward along the Z - axis at a speed of 12 m/s for unloading. 3. **Boundary conditions**: Periodic boundary conditions are adopted in the Y - axis direction, and fixed boundary conditions are adopted in the X - and Z - axis directions. 4. **Temperature control**: The system temperature is controlled at 298 K by the Nose - Hoover algorithm. 5. **Potential function**: The ABOP potential function is used to describe the interaction between atoms. ### Main findings 1. **Influence of different scratch directions on surface topography**: As the scratch depth exceeds 1.6 nm, complete dislocations occur in the crystal sub - surface, resulting in plastic removal of materials. Different scratch directions will lead to changes in surface topography. 2. **Relationship between scratch force and material removal amount**: A smaller tool rake angle can remove more material fragments. 3. **Differences in damage layers**: The differences in damage layers under different scratch directions are small, but the scratch tool with a smaller rake angle generates a thinner damage layer. 4. **Scratch force and workpiece temperature**: When the rake angle of the scratch tool is small, the scratch force and the workpiece temperature are relatively small. ### Conclusion The research results show that during the single - crystal 4H - SiC nano - scratch process, choosing a tool with a smaller rake angle is more helpful to improve the processing effect. This finding provides an important theoretical basis for optimizing the nano - processing technology of single - crystal 4H - SiC.

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