Abstract:High sensitivity to crack and damage of chemical vapor-deposited silicon carbide (CVD- SiC) restricts the high-efficiency and low-damage manufacturing of CVD-SiC components. This paper aims to reveal the damage and material removal mechanisms of CVD-SiC after being scratched by diamond abrasives. The mechanical properties, scratching force, depth of ductile-brittle transition, residual depth and material removal damages of the CVD-SiC were discussed by the indentation, nano-scratching experiments, and compared with sintered silicon carbide (SSiC) ceramics. The results demonstrated that the mechanical properties of CVD-SiC are better than SSiC. In terms of hardness and fracture toughness, CVD-SiC demonstrates a 10– 20% and 20– 30% higher level of performance than SSiC, respectively. SSiC exhibits a brittleness level approximately 30% higher than that of CVD-SiC. SSiC ceramics are prone to crack deflection, intergranular fracture and transgranular fracture during indentation, indicating a higher propensity for brittle fracture in SSiC. The crack propagation in CVD-SiC is relatively regular. Both materials undergo the ductile, ductile-brittle transition and brittle stage, and the fluctuation variability of CVD-SiC material is notably lower than that of SSiC during the brittle stage. Compared with SSiC, the residual depth, groove width and transverse force of CVD-SiC are smaller under the same normal load. The critical depth of ductile-brittle transition of CVD-SiC is about 2 times that of SSiC in experimental and theoretical, indicating that CVD-SiC easily achieves ductile grinding. The mechanical properties, crack system and crystal structure of the CVD-SiC and SSiC materials cause the divergences in brittle removal. The radial-median crack system dominates the material removal of CVD-SiC. The disparity of deformations on the inside and outside of the crystal in the brittle stage leads to significant fluctuation variability of force and depth of SSiC during the scratching.

Investigation on diamond damaged process during a single-scratch of single crystal silicon carbide

Investigation of Material Removal and Grain Wear Mechanism in Single Point Diamond Scratching Tests on SiC

Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation

A material point method based investigation on crack classification and transformation induced by grit geometry during scratching silicon carbide

Surface damage mechanism of monocrystalline silicon during single point diamond grinding

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Effect of dislocation defects on the nano-scratching process of 4H–SiC

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Molecular simulation of ultrasonic assisted diamond grit scratching 4H-SiC single-crystal

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Damage characteristics and material removal mechanisms of CVD-SiC in nanotests: A comparative with sintered SiC

Molecular Dynamics Simulation of Single-Crystal 4H-SiC Nano Scratching with Different Scratching Directions of the Tool

Detection method of subsurface damage of silicon carbide after grinding

Study on wear of diamond during scratching SiC using molecular dynamics simulations

Characterization, Quantitative Evaluation, and Formation Mechanism of Surface Damage in Ultrasonic Vibration Assisted Scratching of Cf/SiC Composites

Impact of multiple abrasive particles on surface properties of SiC: A molecular dynamics simulation study

Experimental Investigation at Relatively High Speed Scratching Induced by a Developed Diamond Tip

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Surface Damage Mechanism of Monocrystalline Si under Mechanical Loading

Molecular Simulation of the Plastic Deformation and Crack Formation in Single Grit Grinding of 4H-Sic Single Crystal

Changes in surface layer of silicon wafers from diamond scratching