Abstract:In abrasive machining of monocrystalline silicon, surface and subsurface behaviors are changed by the brittle-to-ductile removal transfer due to uncertain mechanical force, thus leading to surface micro-burr, surface roughness, subsurface residual stress, subsurface damage and so on. In mechanical diamond grinding, an impulse-discharge between wheel metal and semiconductor silicon is proposed to drive a loose-abrasive flow along with the flexible pressure for nano-scale surface removal, micro-scale mechanical removal and thermal modification. The formation behavior of abrasive-Si interface is researched to improve the surface and subsurface integrity by integrating modification, flexible removal and cut-copying. First, the surface formation procedure was modelled in relation to impulse-discharge energy, hydrodynamic pressure and loose-abrasive diameter, etc. Then, the dynamic characteristic of fixed-diamond, loose-abrasive machining as well as impulse-discharge machining was investigated in relation to the ductile-brittle transition. Finally, the surface integrity of monocrystalline silicon was investigated in hybrid machining. It is shown that the hybrid machined formation chain is formed in the abrasive-workpiece interface with cut-copying the surface profile. The impulse-discharge drives the loose-abrasive and modifies the interface by thermal ductile transition. The loose-abrasive obtains a removal force to eliminate the modified Si–O bond and expose the Si2p3/2, Si2p1/2 substrate with ductile formation. Decreasing the impulse-discharge energy and hydrodynamic pressure promote brittle to ductile transition for high surface and subsurface integrity. Accordingly, the surface integrity is subject to impulse-discharge energy, hydrodynamic pressure and loose-abrasive size. With the thermal tensile and abrasive driven effect of impulse-discharge, the residual compressive stress, surface micro-burr and subsurface damage thickness were decreased by 72 %, 65 % and 88 %, respectively. As a result, the mechanical cut-copying with impulse-discharge thermal modifying action and abrasive flow driving ensures the surface integrity and form accuracy in process.

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

Insights into Interfacial Mechanism of CeO2/Silicon and Atomic-Scale Removal Process During Chemo-Mechanical Grinding of Silicon.

Elimination of Surface Scratch/texture on the Surface of Single Crystal Si Substrate in Chemo-Mechanical Grinding (CMG) Process

Surface Integrity and Removal Mechanism of Chemical Mechanical Grinding of Silicon Wafers Using a Newly Developed Wheel

Material removal mechanism and grinding force modelling of ultrasonic vibration assisted grinding for SiC ceramics

Characteristics of Silicon Substrates Fabricated Using Nanogrinding and Chemo-Mechanical-grinding

Effect of grinding damage on cutting force and ductile machining during single grain scratching of monocrystalline silicon

Material Removal Mechanism of Chemo-Mechanical Grinding (cmg) of Si Wafer by Using Soft Abrasive Grinding Wheel (Sagw)

Surface Characteristics and Material Removal Mechanisms During Nanogrinding on C-face and Si-face of 4H-Sic Crystals: Experimental and Molecular Dynamics Insights

Understanding of the effect of wear particles removal from the surface on grinding silicon carbide by molecular dynamics simulations

Nanoscale Wear Layers on Silicon Wafers Induced by Mechanical Chemical Grinding

Experimental Study on the Removal Behavior of SiCf/SiC by Traditional and Ultrasonic Vibration Assist Scratching with Single Grain Diamond

Atomistic understanding of the subsurface damage mechanism of silicon (100) during the secondary nano-scratching processing

Study on Grinding Performance of Soft Abrasive Wheel for Silicon Wafer

Characterization, Quantitative Evaluation, and Formation Mechanism of Surface Damage in Ultrasonic Vibration Assisted Scratching of Cf/SiC Composites

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Investigation of Material Removal and Grain Wear Mechanism in Single Point Diamond Scratching Tests on SiC

Surface and Subsurface Integrity of Monocrystalline Silicon in Impulse-Discharge Driven Abrasive Machining

Analysis of the high-efficiency and low-damage abrasive processing mechanism for SiC based on the SPH simulation of single-grain indentation and scratching

Surface/subsurface Observation and Removal Mechanisms of Ground Reaction Bonded Silicon Carbide

Experimental Investigation on the Surface and Subsurface Damages Characteristics and Formation Mechanisms in Ultra-Precision Grinding of SiC