Irradiation Defects in Silicon Crystal

WUCheng-long,YANGDe-ren

2003-01-01

Abstract:The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

What problem does this paper attempt to address?

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Huifan Xiong,Xuesong Lu,Xu Gao,Yuchao Yan,Shuai Liu,Lihui Song,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1674-4926/23090024

2024-01-01

Journal of Semiconductors

Abstract:Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence（PL） and deep level transient spectroscopy（DLTS）. The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R 2 （Ec-0.51 eV） appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.
Structural and Luminescent Properties of Electron-Irradiated Silicon

N. A. Sobolev,P. N. Aruev,A. E. Kalyadin,E. I. Shek,V. V. Zabrodskiy,A. S. Loshachenko,K. F. Shtel'makh,V. I. Vdovin,Luelue Xiang,Deren Yang

DOI: https://doi.org/10.1063/1.4865611

2014-01-01

Abstract:Structural defects induced by electron irradiation of p-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 mu m in the room-temperature electroluminescence spectrum.
Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Jiahe Chen,Jan Vanhellemont,Eddy Simoen,Johan Lauwaert,Henk Vrielinck,Joan Marc Rafi,Hidenori Ohyama,Joerg Weber,Deren Yang

DOI: https://doi.org/10.1002/pssc.201000142

2011-01-01

Abstract:Ge doping in Czochralski silicon (Cz-Si) crystal has been proposed as a successful application of the so-called "impurity engineering" leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p-on-n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 10(19) cm(-3) Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Research and Application of Luminescence from Defects in Silicon

Deren Yang

2005-01-01

Abstract:The advancement of information technology requires photon,taking place of electron,to conduct data inside very large scale integrated circuits.Therefore silicon based light-emitter is one of the great scientific chal- lenges at present and crucial to optoelectronics integration.The luminescence of defects in silicon is of great impor- tance and has stimulated extensive interests.Based on the understanding of dislocation-related luminescence,the re- search and application state-of-the-art of defect-related luminescence in silicon has been reviewed.
Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Wanzhen He,Changqing Chen,Zhiping Xu

DOI: https://doi.org/10.1063/1.5121873

IF: 2.877

2019-01-01

Journal of Applied Physics

Abstract:Understanding irradiation effects is crucial for risk management in space science as well as technological development in material processing, imaging, and radiotherapy. The single-particle event is a stepping stone to this complicate, multiscale problem, which finds relevance in low-dose irradiation where long-term effects are usually concerned. Using molecular dynamics simulations, we explore the responses of crystalline silicon carbide nanowires under single-Ga-ion irradiation. It turns out that the channeling mode is more probable compared to focusing for crystalline surfaces at a normal angle of incidence. We find that the surface of nanowires plays a dual role as sites for both defect nucleation and annihilation, leading to notable diameter-dependent responses to the irradiation. The defects created in a single-ion event are localized within a few nanometers, and there exists a critical diameter for nanowires to be minimally damaged. These results allow quantitative assessment of the irradiation damage of nanostructures and guide their design for irradiation-resistant applications.
Defect Annealing of Neutron-Irradiated Silicon Crystals

Meng Xiang-Ti,Zuo Kai-Fen

DOI: https://doi.org/10.1007/bf00360730

IF: 4.5

1995-01-01

Journal of Materials Science

Abstract:Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, activation energy of some annealing stages was calculated and some specific annealing phenomena were explained.
Gamma Ray Irradiated Silicon Nanowires: an Effective Model to Investigate Defects at the Interface of Si/Siox

Kui Yin,Yi Zhao,Wang Xiaoliang,Liangbin Liu,Gi Xue,Shuit-Tong Lee,Mingwang Shao

DOI: https://doi.org/10.1063/1.4863310

IF: 4

2014-01-01

Applied Physics Letters

Abstract:The effect of gamma ray irradiation on silicon nanowires was investigated. Here, an additional defect emerged in the gamma-ray-irradiated silicon nanowires and was confirmed with electron spin resonance spectra. 29Si nuclear magnetic resonance spectroscopy showed that irradiation doses had influence on the Q4 unit structure. This phenomenon indicated that the unique core/shell structure of silicon nanowires might contribute to induce metastable defects under gamma ray irradiation, which served as a satisfactory model to investigate defects at the interface of Si/SiOx.
Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

JJ Niu,H Sha,YW Wang,XY Ma,DR Yang

DOI: https://doi.org/10.1016/s0167-9317(03)00026-1

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:The crystallization and the disappearance of the defects and impurity stress of silicon nanowires (SiNWs) after annealing at high temperature (900°C) have been investigated. The chemical-vapor-deposition (CVD) and alumina template technology were used for the synthesis of the SiNWs. Then transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL) spectra were used to study the crystallization procedure and the disappearance of defects of the SiNWs.
Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Yu Song,Guanghui Zhang,Xue-Fen Cai,Yang Liu,Hang Zhou,Le Zhong,Gang Dai,Xu Zuo,Su-Huai Wei

DOI: https://doi.org/10.48550/arXiv.2008.04486

2021-03-25

Abstract:Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a uniform generation of $E'$ centers in the bulk silica region and their irreversible conversion to $P_b$ centers at the silica-silicon interface. But, the traditional model fails to explain experimentally observed dependence of the defect concentrations on dose, especially at low dose rate. Here, we propose that, the generation of $E'$ is decelerated due to the dispersive diffusion of induced holes in the disordered silica and the conversion of $P_b$ is reversible due to recombination-enhanced defect reactions under irradiation. It is shown that the derived analytic model based on these new understandings can consistently explain the fundamental but puzzling dependence of the defect concentrations on dose and dose rate in a wide range.

Applied Physics,Disordered Systems and Neural Networks,Space Physics
(Invited) Defects in Cast-Mono Crystalline Silicon

Deren Yang

DOI: https://doi.org/10.1149/ma2021-01341090mtgabs

2021-01-01

ECS Meeting Abstracts

Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.
Study of irradiation damage in silicon at different scales

Qingyang Li,Jingbin Lu,Zirui Situ,Xinrui Liu,Yuehui Zhang,Xiangduo Kong,Chengqian Li

DOI: https://doi.org/10.1016/j.mtcomm.2024.108225

IF: 3.8

2024-02-05

Materials Today Communications

Abstract:In this work we focus on the simulation of radiation effects on silicon under proton irradiation at different scales. Two models of the Monte Carlo displacement damage calculation method in the Particle and Heavy Ion Transport code System (PHITS) were first used: the Torrens displacements per atom (NRT-DPA) model and a thermal recombination corrected dpa (arc-DPA), the prediction result of the final arc-DPA model is about 1/3 lower than the traditional NRT-DPA model; we also compared the difference between the two calculated values at the same dose of irradiation. When presenting a molecular dynamics study of the generation and evolution of silicon defects under irradiation, we simulated a 10 keV displacement cascade at room temperature. By post-processing the simulation results, the changes in the distribution and number of defects, as well as the evolution of defect clusters, were analyzed, where both the number of point defects and vacancy clusters show a tendency to increase and then decrease. Finally, first-principles were used to simulate and analyze the energy band structures , DOS, effective mass, the dielectric function, reflection and transmission spectra of silicon after introduction of defects. In order to obtain more accurate value of the bandgap, the HSE06 hybridization generalization is used so that the bandgap is not underestimated, while the clear bandgap facilitates fine analysis of the band structures of the defect states. We found that although the width of the energy band is reduced, which will lead to a increase of intrinsic carrier concentration. At the same time, the effective mass of the electron and hole are greatly reduced, which ultimately leads to a reduction of carrier mobility, and this will finally cause series of performance degradations.

materials science, multidisciplinary
Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Alexander J. Leide,Richard I. Todd,David E. J. Armstrong

DOI: https://doi.org/10.1007/s11837-021-04636-8

2021-05-07

JOM

Abstract:Abstract Silicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.

materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing,mineralogy
Atomic-scale revealing defects in ion irradiated 4H-SiC

Shuai Nan,Meng Xiao,Zhou Guan,Chuangshi Feng,Chao Huo,Gong Li,Pengfei Zhai,Fuxiang Zhang

DOI: https://doi.org/10.1016/j.matchar.2023.113125

IF: 4.537

2023-07-08

Materials Characterization

Abstract:Here we identified atomic-scale defects in ion irradiated 4H-SiC, by integrated differential phase contrast technique equipped on aberration-corrected transmission electron microscopy and Raman scattering spectrometer. In 21 MeV Ni + ions irradiated 4H-SiC, in which electronic energy loss is dominant almost at the whole penetration depth, Si- and C-related vacancies and interstitials are successfully imaged. In 900 keV Si + ions irradiated 4H-SiC, however, the electronic energy loss plays the key role near the surface, and the nuclear and electronic energy loss are comparable at the depth of the peak damaged zone. As a result, 900 keV Si + ions produce more point defects, atomic-scale in-plane and out-of-plane lattice distortions, and plenty of dislocations at the depth of damage peak. Meantime, these imaged point defects may provide direct detailed information for the vibration modes of defects in the Raman spectrum of the damaged 4H-SiC. This study illustrates the compelling intrinsic nature of point defects induced by energetic ions, providing important fundamental information for nuclear and electronic applications.

materials science, multidisciplinary,metallurgy & metallurgical engineering, characterization & testing
Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

Qi Li,Xi Lin,XiaoHui Lin,Yan Xing,Zaifa Zhou

DOI: https://doi.org/10.1016/j.vacuum.2023.112615

IF: 4

2023-09-18

Vacuum

Abstract:The thermal evolution of defects introduced in silicon by line scanning with helium ion microscopy was investigated, confirming that the evolution of the defective structure after annealing at 650 °C for 1 h results in a central void channel and a sector ring of cavities surrounding it, located in the amorphous and transition regions of the unannealed pre-irradiated sample, respectively. The variation of defective structures with annealing temperature and ion dose indicates that high temperature is favorable for the formation of void channels and cavities, and the coarsening and recrystallization processes compete in the shaping of a void channel. The total volume of the defective structure is linearly related to the ion dose, while the zoning phenomenon is attributed to the differences in the vacancy amounts within their locations. These results provide direct experimental evidence for the thermal evolution of defects with zonal characteristics induced by precisely localized helium irradiation.

materials science, multidisciplinary,physics, applied
General Model for Defect Dynamics in Ionizing-Irradiated SiO2-Si Structures

Yu Song,Guanghui Zhang,Xuefen Cai,Baoying Dou,Zhihao Wang,Yang Liu,Hang Zhou,Le Zhong,Gang Dai,Xu Zuo,Su-Huai Wei

DOI: https://doi.org/10.1002/smll.202107516

IF: 13.3

2022-01-01

Small

Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2-Si) structures at room temperature has been modeled by a uniform generation of E-gamma ' centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from E-gamma ' to P-b centers at the SiO2/Si interface through reactions with hydrogen molecules (H-2). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of E-gamma ' centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between E-gamma ' and P-b centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H-2 and P-b centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.
Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Xinpeng Zhang,Xiangyang Ma,Deren Yang,Jan Vanhellemont

DOI: https://doi.org/10.1088/0268-1242/28/8/085013

IF: 2.048

2013-01-01

Semiconductor Science and Technology

Abstract:Scanning infrared microscopy (SIRM) is used to study thermal processing induced oxygen precipitation in low resistivity n+ and p+ Si substrates doped with As, P, Sb or B. It is shown that SIRM allows us to investigate successfully Si samples with resistivities as low as 1.7 m Omega cm and to measure non-destructively bulk micro spectroscopy densities between 10(7) and 10(10) cm(-3) with precipitate sizes as small as 30 nm. Comparison with precipitation in moderate resistivity reference material that received the same thermal treatments reveals a strong impact of doping for concentrations above 5 x 10(18) cm(-3), in particular, in combination with rapid thermal processing pre-treatments at temperatures above 1000 degrees C. The observations can be understood by intrinsic point defect trapping during rapid thermal processing and release during subsequent lower temperature treatments through its impact on homogeneous oxide precipitate nucleation.
Non-linear characteristics of irradiation damages in silicon by MeV Si clusters

dingyu shen,dongxing jiang,xiting lu,yixiong shen,xuemei wang,zonghuang xia,qiang zhao,zhe zhang

DOI: https://doi.org/10.1016/S0169-4332(02)00615-3

IF: 6.7

2002-01-01

Applied Surface Science

Abstract:The irradiation damages produced in silicon crystal by 0.7 and 0.4MeV per atom Sin (n=1–3) were measured. The results of the measurement showed that the relationship between the defect concentrations and the cluster sizes is non-linear; and that the ratio of the defect concentration induced by clusters to that by single atoms increases with the decrease of the energy per atom for given-sized clusters. The experimental results can be well explained by the cooperation of the electronic and nuclear stopping processes.
General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Yu Song,Guanghui Zhang,Xuefen Cai,Baoying Dou,Zhihao Wang,Yang Liu,Hang Zhou,Le Zhong,Gang Dai,Xu Zuo,Su‐Huai Wei

DOI: https://doi.org/10.1002/smll.202107516

IF: 13.3

2022-01-01

Small

Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of E'γ centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from E'γ to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of E'γ centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between E'γ and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.
Ultrasonic Defect Modification in Irradiated Silicon

Lucien Cremaldi,Igor Ostrovskii

DOI: https://doi.org/10.48550/arXiv.cond-mat/0310675

2003-10-29

Materials Science

Abstract:It is shown for the first time, that room temperature Ultrasonic Defect Manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary Ion Mass Spectroscopy revealed that oxygen- and hydrogen- related chemical reactions in silicon are likely to occur under UDM at room temperature. Ultrasonically stimulated chemical reactions in solids can be an important source of energy, which is required for UDM.
General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Yu Song,Guanghui Zhang,Xuefen Cai,Baoying Dou,Zhihao Wang,Yang Liu,Hang Zhou,Le Zhong,Gang Dai,Xu Zuo,Su‐Huai Wei

DOI: https://doi.org/10.1002/smll.202107516

IF: 13.3

2022-02-10

Small

Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Irradiation Defects in Silicon Crystal

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Structural and Luminescent Properties of Electron-Irradiated Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Research and Application of Luminescence from Defects in Silicon

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Defect Annealing of Neutron-Irradiated Silicon Crystals

Gamma Ray Irradiated Silicon Nanowires: an Effective Model to Investigate Defects at the Interface of Si/Siox

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

(Invited) Defects in Cast-Mono Crystalline Silicon

Study of irradiation damage in silicon at different scales

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Atomic-scale revealing defects in ion irradiated 4H-SiC

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Ultrasonic Defect Modification in Irradiated Silicon

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures