Abstract:Silicon carbide (SiC) is a promising structural and cladding material for accident tolerant fuel cladding of nuclear reactor due to its excellent properties. However, when exposed to severe environments (e.g., during neutron irradiation), lattice defects are created in amounts significantly greater than normal concentrations. Then, a series of radiation damage behaviors (e.g., radiation swelling) appear. Accurate understanding of radiation damage of nuclear materials is the key to the design of new fuel cladding materials. Multi-scale computational simulations are often required to understand the physical mechanism of radiation damage. In this work, the effect of neutron irradiation on the volume swelling of cubic-SiC film with 0.3 mm was studied by using the combination of molecular dynamics (MD) and rate theory (RT). It was found that for C-vacancy (CV), C-interstitial (CI), Si-vacancy (SiV), Si-interstitial (SiI), and Si-antisite (SiC), the volume of supercell increases linearly with the increase of concentration of these defects, while the volume of supercell decreases linearly with the increase of defect concentration for C-antisite (CSi). Furthermore, according to the neutron spectrum of a certain reactor, one RT model was constructed to simulate the evolution of point defect under neutron irradiation. Then, the relationship between the volume swelling and the dose of neutrons can be obtained through the results of MD and RT. It was found that swelling typically increases logarithmically with radiation dose and saturates at relatively low doses, and that the critical dose for abrupt transition of volume is consistent with the available experimental data, which indicates that the rate theory model can effectively describe the radiation damage evolution process of SiC. This work not only presents a systematic study on the relationship between various point defect and excess volume, but also gives a good example of multi-scale modelling through coupling the results of binary collision, MD and RT methods, etc., regardless of the multi-scale modelling only focus on the evolution of primary point defects.

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters

Damage production in silicon by MeV Si cluster irradiation

Study of irradiation damage in silicon at different scales

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Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Irradiation Defects in Silicon Crystal

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General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

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General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

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Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

The kinetics of formation and the parameters of radiation defect clusters in silicon

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

A Multi-Scale Simulation Study of Irradiation Swelling of Silicon Carbide

Driving mechanism of neutron-irradiation-induced amorphization in silicon carbide

Implantation Study of Silicon Cluster Ions Si+n(n=1-3)Into Si Crystal

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Evolution of small defect clusters in ion-irradiated 3C-SiC: combined cluster dynamics modeling and experimental study