Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

The kinetics of formation and the parameters of radiation defect clusters in silicon

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Multiscale modeling of clusters of point defects in semiconductor structures

Evolution of small defect clusters in ion-irradiated 3C-SiC: combined cluster dynamics modeling and experimental study

Effects of collision cascades on recombination and clustering of point defects

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Damage production in silicon by MeV Si cluster irradiation

Hybrid mean field and real space model for vacancy diffusion-mediated annealing of radiation defects

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters

Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature

Evolution Of Defects And Defect Clusters In Beta-Sic Irradiated At High Temperature

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Computer Modeling of Radiationally and Thermally Stimulated Processes in a Crystal

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

Diffusion-based Evaluation of Defect Processes in Cascade Zones

Anisotropic diffusion of radiation-induced self-interstitial clusters in HCP zirconium: A molecular dynamics and rate-theory assessment

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Evolution of Ion-Irradiated Point Defect Concentration by Cluster Dynamics Simulation*

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions